No. | Partie # | Fabricant | Description | Fiche Technique |
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Excelliance MOS |
MOSFET |
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Excelliance MOS |
MOSFET |
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Excelliance MOS |
MOSFET |
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Excelliance MOS |
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor e. 2Duty cycle 1% 3Pulsed drain current rating is package limited. 2022/12/19 UNIT V A mJ W °C UNIT °C / W p.1 EMC04N08F ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP |
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Excelliance MOS |
MOSFET |
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Excelliance MOS |
MOSFET EMC04N08E ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Curren |
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Excelliance MOS |
MOSFET |
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Excelliance MOS |
MOSFET |
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