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Excelics Semiconductor |
10.7-11.7GHz 4W Internally Matched Power FET HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(49dBm TYPICAL) +36.5/+35.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9/8dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1011-4P Not recommended for new designs. Contact fac |
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Excelics Semiconductor |
14.00-14.50 GHz 6-Watt Internally Matched Power FET • • • • • • 14.00 – 14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression 33% Power Added Efficiency Hermetic Metal Flange Package .060 MIN. Excelics EIA1414-6 YM |
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Excelics Semiconductor |
14.0-15.35GHz 2W Internally Matched Power FET 2.5 V V o Drain Breakdown Voltage Igd=4.8mA Thermal Resistance (Au-Sn Eutectic Attach) C/W MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Inpu |
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Excelics Semiconductor |
11.0-11.5 GHz 2-Watt Internally Matched Power FET • • • • • • 11.0 – 11.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +34.0 dBm Output Power at 1dB Compression 11.0 dB Power Gain at 1dB Compression 32% Power Added Efficiency Hermetic Metal Flange Package .650±.008 .512 GATE .319 DRAIN Y |
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Excelics Semiconductor |
11.0-14.0 GHz 4-Watt Internally Matched Power FET • • • • • • • • 11.0 – 14.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -36 dBc IM3 at Po = 25.5 dBm SCL Hermetic Metal Flange Package |
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Excelics Semiconductor |
13.75-14.5 GHz 4W Internally Matched Power FET HIGH PAE( 27% TYPICAL) EIB FEATURES HIGH IP3(49dBm TYPICAL) +36.5/+36dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 8.5/7.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1314-4P Not recommended for new designs. Contact f |
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Excelics Semiconductor |
13.75-14.5GHz 8W Internally Matched Power FET -2.5 V V C/W Drain Breakdown Voltage Igd=19.2mA Thermal Resistance (Au-Sn Eutectic Attach) MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg www.DataSheet4U.com Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forw |
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Excelics Semiconductor |
13.0-14.5GHz 4W Internally Matched Power FET HIGH PAE (27% TYPICAL) +36.0dBm TYPICAL P1dB OUTPUT POWER 8.5dB TYPICAL G1dB POWER GAIN NON-HERMETIC METAL FLANGE PACKAGE EIA1314A-4P Not recommended for new designs. Contact factory. Effective 03/2003 13.0-14.5GHz, 4W Internally Matched Power FET |
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Excelics Semiconductor |
14.0-15.35GHz 4W Internally Matched Power FET -2.5 V V o Drain Breakdown Voltage Igd=9.6mA Thermal Resistance (Au-Sn Eutectic Attach) C/W MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current In |
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Excelics Semiconductor |
14.9-15.1GHz 8W Internally Matched Power FET V C/W Drain Breakdown Voltage Igd=19.2mA Thermal Resistance (Au-Sn Eutectic Attach) MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg www.DataSheet4U.com Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate |
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Excelics Semiconductor |
18.7-19.7GHz 1W Internally Matched Power FET HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(43dBm TYPICAL) +30.0/+29.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 6.5/5.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1819-1P Not recommended for new designs. Contact |
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Excelics Semiconductor |
2W Internally Matched Power FET HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9.5/8.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1011-2P www.DataSheet4U.com Not recommended for |
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Excelics Semiconductor |
11.0-11.5 GHz 6-Watt Internally Matched Power FET • • • • • • 11.0 – 11.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 10 dB Power Gain at 1dB Compression 35% Power Added Efficiency Hermetic Metal Flange Package Excelics EIA1111-6 YM SN .094 .382 |
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Excelics Semiconductor |
11.0-14.0 GHz 2-Watt Internally Matched Power FET • • • • • • • • 11.0 – 14.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -36 dBc IM3 at Po = 22.5 dBm SCL Hermetic Metal Flange Package |
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Excelics Semiconductor |
13.75-14.5 GHz 2-W Internally Matched Power FET HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9.0/8.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1314-2P Not recommended for new designs. Contact |
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Excelics Semiconductor |
13.0-14.5GHz 2W Internally Matched Power FET HIGH PAE( 30% TYPICAL) 33.0dBm TYPICAL P1dB OUTPUT POWER 9dB TYPICAL G1dB POWER GAIN NON-HERMETIC METAL FLANGE PACKAGE EIA1314A-2P Not recommended for new designs. Contact factory. Effective 03/2003 13.0-14.5GHz, 2W Internally Matched Power FET EL |
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Excelics Semiconductor |
13.0-14.5GHz 8W Internally Matched Power FET 5 V V C/W Drain Breakdown Voltage Igd=19.2mA Thermal Resistance (Au-Sn Eutectic Attach) MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg www.DataSheet4U.com Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward |
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Excelics Semiconductor |
14.0-14.5GHz 2W Internally Matched Power FET HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9.0/8.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1414-2P Not recommended for new designs. Contact |
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Excelics Semiconductor |
14.0-14.5GHz 4W Internally Matched Power FET HIGH PAE( 27% TYPICAL) EIB FEATURES HIGH IP3(49dBm TYPICAL) +36.5/+35.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 8.5/7.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1414-4P Not recommended for new designs. Contact |
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Excelics Semiconductor |
14.0-14.5GHz 8W Internally Matched Power FET V C/W Drain Breakdown Voltage Igd=19.2mA Thermal Resistance (Au-Sn Eutectic Attach) MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Tem |
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