No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
|
|
Excel Semiconductor |
Zener diode 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Junction temperature Storage temperature range Test Conditions RthJA≦300K/W |
|
|
|
Excel Semiconductor |
Zener diode 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Junction temperature Storage temperature range Test Conditions RthJA≦300K/W |
|
|
|
Excel Semiconductor |
Zener diode 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Junction temperature Storage temperature range Test Conditions RthJA≦300K/W |
|
|
|
Excel Semiconductor |
Zener diode 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Junction temperature Storage temperature range Test Conditions RthJA≦300K/W |
|
|
|
Excel Semiconductor |
Zener diode 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Junction temperature Storage temperature range Test Conditions RthJA≦300K/W |
|
|
|
Excel Semiconductor |
Zener diode 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Junction temperature Storage temperature range Test Conditions RthJA≦300K/W |
|
|
|
Excel Semiconductor |
Zener diode 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Junction temperature Storage temperature range Test Conditions RthJA≦300K/W |
|
|
|
Excel Semiconductor |
Zener diode 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Junction temperature Storage temperature range Test Conditions RthJA≦300K/W |
|
|
|
Excel Semiconductor |
Zener diode 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Junction temperature Storage temperature range Test Conditions RthJA≦300K/W |
|
|
|
Excel Semiconductor |
Zener diode 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Junction temperature Storage temperature range Test Conditions RthJA≦300K/W |
|
|
|
Excel Semiconductor |
Zener diode 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Junction temperature Storage temperature range Test Conditions RthJA≦300K/W |
|
|
|
Excel Semiconductor |
Zener diode 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Junction temperature Storage temperature range Test Conditions RthJA≦300K/W |
|
|
|
Excel Semiconductor |
Zener diode 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Junction temperature Storage temperature range Test Conditions RthJA≦300K/W |
|
|
|
Excel Semiconductor |
Zener diode 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Junction temperature Storage temperature range Test Conditions RthJA≦300K/W |
|
|
|
Excel Semiconductor |
Zener diode 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Junction temperature Storage temperature range Test Conditions RthJA≦300K/W |
|
|
|
Excel Semiconductor |
Zener diode 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Junction temperature Storage temperature range Test Conditions RthJA≦300K/W |
|
|
|
Excel Semiconductor |
Zener diode 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Junction temperature Storage temperature range Test Conditions RthJA≦300K/W |
|
|
|
Excel Semiconductor |
Zener diode 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Junction temperature Storage temperature range Test Conditions RthJA≦300K/W |
|
|
|
Excel Semiconductor |
Zener diode 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Junction temperature Storage temperature range Test Conditions RthJA≦300K/W |
|
|
|
Excel Semiconductor |
Zener diode 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Junction temperature Storage temperature range Test Conditions RthJA≦300K/W |
|