| No. | Partie # | Fabricant | Description | Fiche Technique |
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Everspin Technologies |
256Kb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate • 2.7 to 3.6 Volt power supply ra |
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Everspin Technologies |
256Kb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate • 2.7 to 3.6 Volt power supply ra |
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Everspin |
256K x 16 MRAM Memory • Fast 35 ns Read/Write cycle • SRAM compatible timing, uses existing SRAM control- lers without redesign • Unlimited Read & Write endurance • Data non-volatile for >20 years at temperature • One memory replaces Flash, SRAM, EEPROM and BBSRAM in |
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Everspin Technologies |
1Mb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate • 2.7 to 3.6 Volt power supply ra |
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Everspin |
4Mb SPI Interface MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Fast, simple SPI interface, up to 50 MHz clock rate with MR20H40. • 3.0 to 3.6 Volt power supply range • Low-curre |
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Everspin |
4Mb SPI Interface MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Fast, simple SPI interface, up to 50 MHz clock rate with MR20H40. • 3.0 to 3.6 Volt power supply range • Low-curre |
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