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Eudyna Devices |
C-Band Power GaAs FET • High Output Power: P1dB = 28.8dBm (Typ.) • High Gain: G1dB = 8.5dB(Typ.) • High PAE: ηadd = 35%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package FLC097WF C-Band Power GaAs FET DESCRIPTION The FLC097WF is a power GaAs FET that is design |
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Eudyna Devices |
C-Band Power GaAs FET • High Output Power: P1dB = 34.0dBm(Typ.) • High Gain: G1dB = 9.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package C-Band Power GaAs FET DESCRIPTION The FLC257MH-6 is a power GaAs FET that is designed for g |
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Eudyna Devices |
C-Band Power GaAs FET • High Output Power: P1dB = 34.0dBm(Typ.) • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 35%(Typ.) • ProvenReliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC257MH-8 is a power GaAs FET that is designed for general purpose applicatio |
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Eudyna Devices |
C-Band Power GaAs FET • High Output Power: P1dB = 30.0dBm(Typ.) • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package FLC107WG C-Band Power GaAs FET DESCRIPTION The FLC107WG is a power GaAs FET that is designe |
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