| No. | Partie # | Fabricant | Description | Fiche Technique |
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Etron Technology |
8M x 16 Mobile DDR Synchronous DRAM Fast clock rate: 166/133 MHz Differential Clock CK & CK Bi-directional DQS Four internal banks, 2M x 16-bit for each bank Edge-aligned with read data, centered in write data Programmable Mode and Extended Mode Registers • - CAS Latency: 2, or 3 - Bur |
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Etron Technology Inc. |
8Mega x 16bits SDRAM • Fast access time from clock: 4.5/5/5.4 ns • Fast clock rate: 200/166/143 MHz • Fully synchronous operation • Internal pipelined architecture • 2M word x 16-bit x 4-bank • Programmable Mode registers - CAS Latency: 2, or 3 - Burst Length: 1, 2, 4, 8 |
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Etron Technology |
16M x 16 bit DDR Synchronous DRAM • Fast clock rate: 250/200MHz • Differential Clock CK & CK • Bi-directional DQS • DLL enable/disable by EMRS • Fully synchronous operation • Internal pipeline architecture • Four internal banks, 4M x 16-bit for each bank • Programmable Mode and Exten |
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Etron Technology |
8M x 16 bit DDRII Synchronous DRAM • JEDEC Standard Compliant • JEDEC Standard 1.8V I/O (SSTL_18-compatible) • Power supplies: VDD & VDDQ = +1.8V ± 0.1V • Operating temperatue: 0 – 85 °C • Supports JEDEC clock jitter specification • Fully synchronous operation • Fast clock rate: 266/3 |
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Etron Technology |
4M x 32 Mobile DDR Synchronous DRAM Fast clock rate: 166/133 MHz Differential Clock CK & CK Bi-directional DQS Four internal banks, 1M x 32-bit for each bank Edge-aligned with read data, centered in write data Programmable Mode and Extended Mode Registers - CAS Latency: 2, or 3 - Burst |
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Etron Technology |
64M x 16 bit DDR3 Synchronous DRAM • JEDEC Standard Compliant • Power supplies: VDD & VDDQ = +1.5V ± 0.075V • Operating temperature: 0~95°C (TC) • Supports JEDEC clock jitter specification • Fully synchronous operation • Fast clock rate: 667/800/933MHz • Differential Clock, CK & CK# • |
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Etron Technology |
8M x 32 DDR SDRAM • Fast clock rate: 300/275/250/200 MHz • Differential Clock CK & CK# input • 4 Bi-directional DQS. Data transactions on both edges of DQS (1DQS / Byte) • DLL aligns DQ and DQS transitions • Edge aligned data & DQS output • Center aligned data & DQS i |
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Etron Technology Inc. |
4M x 16 DDR Synchronous DRAM (SDRAM) Fast clock rate: 300/285/250/200/166/143/125MHz Differential Clock CK & /CK Bi-directional DQS DLL enable/disable by EMRS Fully synchronous operation Internal pipeline architecture Four internal banks, 1M x 16-bit for each bank Programmable Mode and |
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Etron Technology Inc. |
4M x 32 DDR SDRAM • Fast clock rate: 350/333/300/285/250/200 MHz • Differential Clock CK & CK# input • 4 Bi-directional DQS. Data transactions on both edges of DQS (1DQS / Byte) • DLL aligns DQ and DQS transitions • Edge aligned data & DQS output • Center aligned data |
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Etron Technology |
32M x 16 bit DDR Synchronous DRAM • Fast clock rate: 200MHz • Differential Clock CK & CK • Bi-directional DQS • DLL enable/disable by EMRS • Fully synchronous operation • Internal pipeline architecture • Four internal banks, 8M x 16-bit for each bank • Programmable Mode and Extend |
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Etron Technology |
128M x 8 bit DDRII Synchronous DRAM • JEDEC Standard Compliant • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Power supplies: VDD & VDDQ = +1.8V ± 0.1V • Operating temperature: TC = 0~85 °C • Supports JEDEC clock jitter specification • Fully synchronous operation • Fast clock rate: 3 |
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Etron Technology |
32M x 16 bit DDRII Synchronous DRAM • JEDEC Standard Compliant • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Power supplies: VDD & VDDQ = +1.8V ± 0.1V • Operating temperature: TC = 0~85°C • Supports JEDEC clock jitter specification • Fully synchronous operation • Fast clock rate: 33 |
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Etron Technology |
16M x 32 Mobile DDR Synchronous DRAM • Fast clock rate: 166/133 MHz • Differential Clock CK & CK • Bi-directional DQS • Four internal banks, 4M x 32-bit for each bank • Edge-aligned with read data, centered in write data • Programmable Mode and Extended Mode Registers - CAS Latency: 2, |
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Etron Technology |
32M x 16 Mobile DDR Synchronous DRAM • Fast clock rate: 166/133 MHz • Differential Clock CK & CK • Bi-directional DQS • Four internal banks, 8M x 16-bit for each bank • Edge-aligned with read data, centered in write data • Programmable Mode and Extended Mode Registers - CAS Latency: 2, |
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Etron Technology |
4M x 16 bit Synchronous DRAM Overview • Fast access time from clock: 4.5/5.4/5.4 ns • Fast clock rate: 200/166/143 MHz • Fully synchronous operation • Internal pipelined architecture • 1M word x 16-bit x 4-bank • Programmable Mode registers - CAS Latency: 2 or 3 - Burst Length |
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Etron Technology |
64M x 8 bit DDRII Synchronous DRAM • JEDEC Standard Compliant • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Power supplies: VDD & VDDQ = +1.8V ± 0.1V • Operating temperature: 0 – 95 °C • Supports JEDEC clock jitter specification • Fully synchronous operation • Fast clock rate: 333/ |
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Etron Technology |
32M x 16 bit DDRII Synchronous DRAM • JEDEC Standard Compliant • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Power supplies: VDD & VDDQ = +1.8V ± 0.1V • Operating temperatue: 0 – 85 °C • Supports JEDEC clock jitter specification • Fully synchronous operation • Fast clock rate: 333/4 |
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Etron Technology |
1Mega x 16 Synchronous DRAM • • • • • • Fast access time: 5/5.5/6.5/7.5 ns Fast clock rate: 166/143/125/100 MHz Self refresh mode: standard and low power Internal pipelined architecture 512K word x 16-bit x 2-bank Programmable Mode registers - CAS# Latency: 1, 2, or 3 - Burst L |
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Etron Technology |
2M x 32 Synchronous DRAM Clock rate: 200/183/166/143/125/100 MHz Fully synchronous operation Internal pipelined architecture Four internal banks (512K x 32bit x 4bank) Programmable Mode - CAS# Latency: 2 or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: interleaved |
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Etron Technology |
4M x 32 Low Power SDRAM Clock rate: 133/125/100 MHz Fully synchronous operation Internal pipelined architecture Four internal banks (1M x 32bit x 4bank) Programmable Mode - CAS# Latency: 1, 2 & 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential & Interleave |
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