No. | Partie # | Fabricant | Description | Fiche Technique |
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Texas Instruments |
1-4 Cell Li+ Battery SMBus Charge Controller •1 SMBus Host-controlled NMOS-NMOS synchronous buck converter with programmable 615kHz, 750kHz, and 885kHz switching frequencies • Automatic N-channel MOSFET selection of system power source from adapter or battery driven by internal charge pumps • E |
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ETC |
Low Standy-Power Quasi-Resonant Primary-Side Converter |
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ETC |
High Speed Metal Gear Dual Ball Bearing Servo nge: 0 ºC – 55 ºC |
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ETC |
Metal Gear Servo |
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ETC |
Complementary Power Transistors • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • Lead Formed Version in 16 mm Tape and Reel for Surface Mount • • • • • • (“T4” Suffix) Electri |
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ETC |
Learning remote control with dedicated IC |
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Texas Instruments |
1- to 4-Cell Hybrid Power Boost Mode Battery Charge Controller •1 Industrial Innovative Charge Controller With Hybrid Power Boost Mode – Adapter and Battery Provides Power to System Together for Intel® CPU Turbo Mode – Ultra-Fast Transient Response of 150 µs to Enter Boost Mode – Hybrid Power Boost Mode from 4.5 |
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Texas Instruments |
1- to 4-Cell Li+ Battery SMBus Charge Controller •1 Adapter and Battery Provide Power to System Together to Support Intel® CPU Turbo Boost Mode • SMBus Host-Controlled NMOS-NMOS Synchronous Buck Converter With Programmable 615-, 750-, and 885-kHz Switching Frequencies • Automatic N-Channel MOSFET S |
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ETC |
NPN Silicon Bipolar Transistor |
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ETC |
Varistors Ϡ Low leakage current,Excellent voltage ratio. Ϡ Fast respond to the rapidly rising surge voltage. Ϡ High performance in clamping voltage characteristics. Ϡ High performance in surge current withstanding capability. Applications Ϡ Transistor, diod |
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ETC |
Low-frequency amplification shell rated bipolar transistors 0.7 4 4 V V V S S MHz ×îСֵ 400 700 9 100 50 10 50 ×î´óÖµ . µ¥Î» V V V A A A VCEO(SUS) V(BR)CBO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat)(1) IC=2A, VCE(sat)(2) IC=8A, VBE(sat) tf ts fT IC=2A, VCC=24V IC=5A, IB1=-IB2=1A VCC=24V IC=5A, IB1=-IB |
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ETC |
Infrared Distance Ranging Sensor Power Supply: 5VDC Supply current DC <25mA Maximum load current 100mA (Open-collector NPN pulldown output) Response time <2ms Diameter: 17MM Pointing angle: ≤ 15 °, effective from 3-80CM Adjustable Detection of objects: transparent or o |
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ETC |
MONITOR CONTROL BOARD 4.PCB DIMENSIONS 5.INTERFACE DEFINITION 6.CONFIGURATION & GENERAL PRECAUTIONS M.NT68676.2A-SPECIFICATION PAGE 2 2 3 4 5 8 REVISION HISTORY VERSION DATE A0 2011.12.27 A1 2013.01.08 A2 2013.05.09 BOARD ID M.NT68676.2A 11486 M.NT68676.2A 12516 M |
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ETC |
4-BIT BINARY FULL ADDER W/FAST CARRY |
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ETC |
Two lights Charger =100n 3: L1 L2 L3 -3mA(*)(**) -5mA(*)(**) 0 200mA(**) 10uA(**) -- │V -V │ <4.09V(**) ≥4.09V(**) 4.17V(**) <4.25V(**) 4.25V(**) <2V(**) BTP BTN 46 Free Datasheet http://www.datasheet4u.com/ TC3582 :(S&CIC |
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ETC |
Infrared Receiver |
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ETC |
Complementary Power Transistors • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • Lead Formed Version in 16 mm Tape and Reel for Surface Mount • • • • • • (“T4” Suffix) Electri |
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ETC |
Infrared Receiver Module |
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ETC |
Low-frequency amplification shell rated bipolar transistors µçÌØÐÔ Ïî ¼¯µç«¡ª»ù÷´©Ñ¹ ·¢É伫¡ª»ù÷´©µçѹ ¼¯µç«¡ª»ù ·´Ïò©Á÷ ·¢É伫¡ª»ù´Ïò©µçÁ÷ Ö±Á÷µçÔöÒæ ¼¯µç«¡ª ·¢Éä±¥ºÍѹ½ »ù¼«¡ª ·¢Éä±¥ºÍѹ½µ ×èÄá¶þ¼«¹ÜÕýÏòѽµ ϽµÊ±¼ä Öü´æʱ¼ä ÌØÕ÷ƵÂÊ (Tc=25¡æ Ä¿ V(BR)CBO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) |
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Texas Instruments |
1-4 Cell Li+ Battery SMBus Charge Controller |
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