Eris SMA fiche technique

No.	Partie #	Fabricant	Description
1	SMA4762A	Eris	Surface Mount Zener Device ‧Glass passivated chip ‧Low leakage ‧Built-in strain relief ‧Low inductance ‧High peak reverse power dissipation ‧Lead (Pb)-free component ‧For use in stabilizing and clipping with high power rating PrimaryCharacteristics VRRM VF TJ max 3.3~330V 1.
2	SMA4761A	Eris	Surface Mount Zener Device ‧Glass passivated chip ‧Low leakage ‧Built-in strain relief ‧Low inductance ‧High peak reverse power dissipation ‧Lead (Pb)-free component ‧For use in stabilizing and clipping with high power rating PrimaryCharacteristics VRRM VF TJ max 3.3~330V 1.
3	SMA4756A	Eris	Surface Mount Zener Device ‧Glass passivated chip ‧Low leakage ‧Built-in strain relief ‧Low inductance ‧High peak reverse power dissipation ‧Lead (Pb)-free component ‧For use in stabilizing and clipping with high power rating PrimaryCharacteristics VRRM VF TJ max 3.3~330V 1.
4	SMA4755A	Eris	Surface Mount Zener Device ‧Glass passivated chip ‧Low leakage ‧Built-in strain relief ‧Low inductance ‧High peak reverse power dissipation ‧Lead (Pb)-free component ‧For use in stabilizing and clipping with high power rating PrimaryCharacteristics VRRM VF TJ max 3.3~330V 1.
5	SMA4744A	Eris	Surface Mount Zener Device ‧Glass passivated chip ‧Low leakage ‧Built-in strain relief ‧Low inductance ‧High peak reverse power dissipation ‧Lead (Pb)-free component ‧For use in stabilizing and clipping with high power rating PrimaryCharacteristics VRRM VF TJ max 3.3~330V 1.
6	SMA4745A	Eris	Surface Mount Zener Device ‧Glass passivated chip ‧Low leakage ‧Built-in strain relief ‧Low inductance ‧High peak reverse power dissipation ‧Lead (Pb)-free component ‧For use in stabilizing and clipping with high power rating PrimaryCharacteristics VRRM VF TJ max 3.3~330V 1.
7	SMA4734A	Eris	Surface Mount Zener Device ‧Glass passivated chip ‧Low leakage ‧Built-in strain relief ‧Low inductance ‧High peak reverse power dissipation ‧Lead (Pb)-free component ‧For use in stabilizing and clipping with high power rating PrimaryCharacteristics VRRM VF TJ max 3.3~330V 1.
8	SMA4731A	Eris	Surface Mount Zener Device ‧Glass passivated chip ‧Low leakage ‧Built-in strain relief ‧Low inductance ‧High peak reverse power dissipation ‧Lead (Pb)-free component ‧For use in stabilizing and clipping with high power rating PrimaryCharacteristics VRRM VF TJ max 3.3~330V 1.
9	SMA4729A	Eris	Surface Mount Zener Device ‧Glass passivated chip ‧Low leakage ‧Built-in strain relief ‧Low inductance ‧High peak reverse power dissipation ‧Lead (Pb)-free component ‧For use in stabilizing and clipping with high power rating PrimaryCharacteristics VRRM VF TJ max 3.3~330V 1.
10	1N4148M	Eris	SMALL SIGNAL SWITCHING DIODE ‧Fast switching Speed. ‧Electrically ldentical to Standerd JEDEC ‧High Conductance ‧Axial lead Package ldeally Suited for Automatic lnsertion. ‧Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above Elect
11	SMA4764A	Eris	Surface Mount Zener Device ‧Glass passivated chip ‧Low leakage ‧Built-in strain relief ‧Low inductance ‧High peak reverse power dissipation ‧Lead (Pb)-free component ‧For use in stabilizing and clipping with high power rating PrimaryCharacteristics VRRM VF TJ max 3.3~330V 1.
12	SMA4763A	Eris	Surface Mount Zener Device ‧Glass passivated chip ‧Low leakage ‧Built-in strain relief ‧Low inductance ‧High peak reverse power dissipation ‧Lead (Pb)-free component ‧For use in stabilizing and clipping with high power rating PrimaryCharacteristics VRRM VF TJ max 3.3~330V 1.
13	SMA4758A	Eris	Surface Mount Zener Device ‧Glass passivated chip ‧Low leakage ‧Built-in strain relief ‧Low inductance ‧High peak reverse power dissipation ‧Lead (Pb)-free component ‧For use in stabilizing and clipping with high power rating PrimaryCharacteristics VRRM VF TJ max 3.3~330V 1.
14	SMA4759A	Eris	Surface Mount Zener Device ‧Glass passivated chip ‧Low leakage ‧Built-in strain relief ‧Low inductance ‧High peak reverse power dissipation ‧Lead (Pb)-free component ‧For use in stabilizing and clipping with high power rating PrimaryCharacteristics VRRM VF TJ max 3.3~330V 1.
15	SMA4757A	Eris	Surface Mount Zener Device ‧Glass passivated chip ‧Low leakage ‧Built-in strain relief ‧Low inductance ‧High peak reverse power dissipation ‧Lead (Pb)-free component ‧For use in stabilizing and clipping with high power rating PrimaryCharacteristics VRRM VF TJ max 3.3~330V 1.
16	SMA4754A	Eris	Surface Mount Zener Device ‧Glass passivated chip ‧Low leakage ‧Built-in strain relief ‧Low inductance ‧High peak reverse power dissipation ‧Lead (Pb)-free component ‧For use in stabilizing and clipping with high power rating PrimaryCharacteristics VRRM VF TJ max 3.3~330V 1.
17	SMA4752A	Eris	Surface Mount Zener Device ‧Glass passivated chip ‧Low leakage ‧Built-in strain relief ‧Low inductance ‧High peak reverse power dissipation ‧Lead (Pb)-free component ‧For use in stabilizing and clipping with high power rating PrimaryCharacteristics VRRM VF TJ max 3.3~330V 1.
18	SMA4753A	Eris	Surface Mount Zener Device ‧Glass passivated chip ‧Low leakage ‧Built-in strain relief ‧Low inductance ‧High peak reverse power dissipation ‧Lead (Pb)-free component ‧For use in stabilizing and clipping with high power rating PrimaryCharacteristics VRRM VF TJ max 3.3~330V 1.
19	SMA4751A	Eris	Surface Mount Zener Device ‧Glass passivated chip ‧Low leakage ‧Built-in strain relief ‧Low inductance ‧High peak reverse power dissipation ‧Lead (Pb)-free component ‧For use in stabilizing and clipping with high power rating PrimaryCharacteristics VRRM VF TJ max 3.3~330V 1.
20	SMA4748A	Eris	Surface Mount Zener Device ‧Glass passivated chip ‧Low leakage ‧Built-in strain relief ‧Low inductance ‧High peak reverse power dissipation ‧Lead (Pb)-free component ‧For use in stabilizing and clipping with high power rating PrimaryCharacteristics VRRM VF TJ max 3.3~330V 1.