| No. | Partie # | Fabricant | Description | Fiche Technique |
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ETCTI |
Synchronous Dynamic RAM Modules |
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Texas Instruments |
DYNAMIC RAM MODULES erature Range 0°C to 70°C D Gold-Plated Contacts D Performance Ranges ACCESS ACCESS ACCESS EDO TIME TIME TIME CYCLE tRAC (MAX) tCAC tAA tHPC (MAX) (MAX) (MIN) ’16ENxxxPU-40 40 ns 11 ns 20 ns 16 ns ’16ENxxxPU-50 50 ns 13 ns 25 ns 20 ns ’ |
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Texas Instruments |
DYNAMIC RAM MODULES erature Range 0°C to 70°C D Gold-Plated Contacts D Performance Ranges ACCESS ACCESS ACCESS EDO TIME TIME TIME CYCLE tRAC (MAX) tCAC tAA tHPC (MAX) (MAX) (MIN) ’16ENxxxPU-40 40 ns 11 ns 20 ns 16 ns ’16ENxxxPU-50 50 ns 13 ns 25 ns 20 ns ’ |
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Texas Instruments |
DYNAMIC RAM MODULES erature Range 0°C to 70°C D Gold-Plated Contacts D Performance Ranges ACCESS ACCESS ACCESS EDO TIME TIME TIME CYCLE tRAC (MAX) tCAC tAA tHPC (MAX) (MAX) (MIN) ’16ENxxxPU-40 40 ns 11 ns 20 ns 16 ns ’16ENxxxPU-50 50 ns 13 ns 25 ns 20 ns ’ |
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Texas Instruments |
DYNAMIC RAM MODULES erature Range 0°C to 70°C D Gold-Plated Contacts D Performance Ranges ACCESS ACCESS ACCESS EDO TIME TIME TIME CYCLE tRAC (MAX) tCAC tAA tHPC (MAX) (MAX) (MIN) ’16ENxxxPU-40 40 ns 11 ns 20 ns 16 ns ’16ENxxxPU-50 50 ns 13 ns 25 ns 20 ns ’ |
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Texas Instruments |
SYNCHRONOUS DYNAMIC RAM MODULES rleave and Burst-Interrupt Operations D Burst Length Programmable to 1, 2, 4, and 8 D Four Banks for On-Chip Interleaving (Gapless Access) D Ambient Temperature Range 0°C to 70°C D Gold-Plated Contacts D Pipeline Architecture D Serial Presence-Detect |
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Texas Instruments |
SYNCHRONOUS DYNAMIC RAM MODULES rleave and Burst-Interrupt Operations D Burst Length Programmable to 1, 2, 4, and 8 D Four Banks for On-Chip Interleaving (Gapless Access) D Ambient Temperature Range 0°C to 70°C D Gold-Plated Contacts D Pipeline Architecture D Serial Presence-Detect |
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