| No. | Partie # | Fabricant | Description | Fiche Technique |
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ETC |
GaN high electron mobility transistor .7 CW @ Psat Gp (dB) 9.8 9.2 9.5 ηD (%) 59.4 58.8 58.9 Ids (A) 3.97 3.75 3.57 (TC=25℃， ) Production Fig. 2 Gain, Drain efficiency vs. output power PCB （mm） Fig. 3 PCB layout and dimension S/N Designator 1 C5，C6,C7,C20 2 C21，C11 3 C8,C4， |
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