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ETC |
Transistor |
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ETC |
PNP SILICON TRANSISTOR |
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ETC |
Complementary Power Transistors • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • Lead Formed Version in 16 mm Tape and Reel for Surface Mount • • • • • • (“T4” Suffix) Electri |
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ETC |
NPN Silicon Bipolar Transistor |
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ETC |
Transistor |
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ETC |
NPN Transistor off Current at VCB=60V Emitter Cutoff Current at VEB=5V Collector Saturation Voltage at IC=50mA, IB=5mA Gain Bandwidth Product at VCE=12V, IC=2mA Output Capacitance at VCB=12V, f=1MHz COB 2 3.5 pF fT 180 MHz VCE(sat) 0.4 V IEBO 0.1 µA ICBO 0.1 µA V(B |
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ETC |
Low-frequency amplification shell rated bipolar transistors 0.7 4 4 V V V S S MHz ×îСֵ 400 700 9 100 50 10 50 ×î´óÖµ . µ¥Î» V V V A A A VCEO(SUS) V(BR)CBO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat)(1) IC=2A, VCE(sat)(2) IC=8A, VBE(sat) tf ts fT IC=2A, VCC=24V IC=5A, IB1=-IB2=1A VCC=24V IC=5A, IB1=-IB |
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ETC |
Coated Wire-wound Resistors ● ● ● ●Low noise ●Excellent linearity ●High temperature resistant ◆ Dimensions(mm) Type RX21-0.25W RX21-0.5W RX21-1W RX21-2W(3W) RX21-4W RX21-5W(6W) RX21-8W RX21-10W RX21-12W Lmax 8 10 15 16 26 26 34 40 48 Dimensions(mm) D±1 2.5 3.5 4.5 6.5 9 9.5 |
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ETC |
NPN Silicon Transistor Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=40V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage at IC=100mA, IB=10mA Gain Bandwidth Product at VCE=6V, IC=10mA Output Capacitance at VCB=6V, f=1MHz Noise Figure at VCE=6V, |
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ETC |
NPN Transistor |
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ETC |
TRANSISTOR |
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ETC |
PNP Transistor High current Low voltage 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC ICM hFE Quick reference data Parameter Conditions collector-emitter voltage collector current (DC) op |
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ETC |
Silicon NPN Power Transistor ee Datasheet http://www.datasheet4u.com/ INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC4977 MAX UNIT VCEO( |
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ETC |
Complementary Power Transistors • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • Lead Formed Version in 16 mm Tape and Reel for Surface Mount • • • • • • (“T4” Suffix) Electri |
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ETC |
Low-frequency amplification shell rated bipolar transistors µçÌØÐÔ Ïî ¼¯µç«¡ª»ù÷´©Ñ¹ ·¢É伫¡ª»ù÷´©µçѹ ¼¯µç«¡ª»ù ·´Ïò©Á÷ ·¢É伫¡ª»ù´Ïò©µçÁ÷ Ö±Á÷µçÔöÒæ ¼¯µç«¡ª ·¢Éä±¥ºÍѹ½ »ù¼«¡ª ·¢Éä±¥ºÍѹ½µ ×èÄá¶þ¼«¹ÜÕýÏòѽµ ϽµÊ±¼ä Öü´æʱ¼ä ÌØÕ÷ƵÂÊ (Tc=25¡æ Ä¿ V(BR)CBO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) |
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ETC |
Amplifier Transistors E = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 150°C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 10 V) B |
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ETC |
Silicon NPN Power Transistors =25 unless otherwise specified www.datasheet4u.com SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-base breakdown voltage IE=200mA; IC=0 VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A VBEsat Base-emitter saturation voltage IC=4A; I |
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ETC |
Low-frequency amplification shell rated bipolar transistors µ 1700 5 66 10 5 1.7 ×î´óÖµ 1 200 30 5 1.5 2 0.7 12 ¦Ì ¦Ì V V V S S µ¥Î» V V mA mA V(BR)CBO V(BR)EBO ICBO IEBO Ö±Á÷µçÔöÒæ ¼¯µç«¡ª ·¢Éä±¥ºÍѹ½ »ù¼«¡ª ·¢Éä±¥ºÍѹ½µ ×èÄá¶þ¼«¹ÜÕýÏòѽµ ϽµÊ±¼ä Öü´æʱ¼ä ÌØÕ÷ƵÂÊ hFE(1) hFE(2) VCE(sat) VBE(sat) -VF tf ts fT |
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Texas Instruments |
High-Current Darlington Transistor Arrays • 500-mA-Rated Collector Current (Single Output) • High-Voltage Outputs: 50 V • Output Clamp Diodes • Inputs Compatible With Various Types of Logic • Relay-Driver Applications 2 Applications • Relay Drivers • Stepper and DC Brushed Motor Drivers • La |
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ETC |
PNP Transistor |
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