| No. | Partie # | Fabricant | Description | Fiche Technique |
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ETC |
ELECTROMAGNETIC BUZZER ℃ ~ +80℃ DATE: 2000.02.18 PAGE: 1/5 PRODUCT SPECIFICATION ALP1205S (ELECTROMAGNETIC BUZZER) CUSTOMER: PRODUCER: 4. RELIABILITY TEST NO. ITEM TESTING CONDITION VARIANCE AFTER TEST 4-1 HUMIDITY 55+/-5℃,95+/-3%RH 96HRS SOUND PRESSURE LEVEL INI |
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Texas Instruments |
High-Performance Clock 2:8 Buffer •1 2:8 Differential Buffer • Selectable Clock Inputs Through Control terminal • Universal Inputs Accept LVPECL, LVDS, and LVCMOS/LVTTL • Eight LVPECL Outputs • Maximum Clock Frequency: 2 GHz • Maximum Core Current Consumption: 73 mA • Very Low Additi |
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Texas Instruments |
DisplayPort 1:1 Dual-Mode Repeater 1 • DP Signal Repeater Supporting Dual-Mode DisplayPort DP1.1a (DP++) Signaling • Supports Data Rates up to 2.7Gbps • Participates in DP Link Training to set Output Voltage and Pre-Emphasis Levels • Automatic Selectable Equalization for Improved Sign |
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ETC |
DIODA UNIWERSALNA |
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Texas Instruments |
High-Performance Clock Buffer •1 2:12 Differential Buffer • Selectable Clock Inputs Through Control Terminal • Universal Inputs Accept LVPECL, LVDS, and LVCMOS/LVTTL • 12 LVPECL Outputs • Maximum Clock Frequency: 2 GHz • Maximum Core Current Consumption: 88 mA • Very Low Additive |
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ETC |
300mA Current Voltage Regulators |
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ETC |
Silicon Controlled Rectifier * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=12A) * Low On-State Voltage (1.3V(Typ.)@ ITM) * Non-isolated Type █ General Description Standard gate triggering SCR is suitable for the application where requiring high bi- |
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ETC |
PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 |
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ETC |
PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 |
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ETC |
PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 |
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ETC |
HGTP12N60 • 12A, 600V • Latch Free Operation • Typical Fall Time <500ns • High Input Impedance • Low Conduction Loss www.DataSheet4U.com Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar trans |
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ETC |
Geiger-Muller Tube |
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ETCTI |
Accurate Programmable Digital Temp Sensor w/ SPI Interface (Rev. B) |
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ETCTI |
12-Bit 21-MSPS UltraLow-Power CCD Signal Processor (Rev. B) |
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Texas Instruments |
High-Performance Clock Buffer •1 2:16 Differential Buffer • Selectable Clock Inputs Through Control Pin • Universal Inputs Accept LVPECL, LVDS, and LVCMOS/LVTTL • 16 LVPECL Outputs • Maximum Clock Frequency: 2 GHz • Maximum Core Current Consumption: 110 mA • Very Low Additive Jit |
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ETC |
IGBT erter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral I 2t - value Tc = 80 °C tP = 1 ms VR = 0V, tp = 10ms, Tvj = 125°C IF I FRM I 2t 15 30 125 A A A2s Tc = 80 °C TC = 25 °C tP = 1 ms, TC |
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ETC |
PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 |
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ETC |
PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 |
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ETC |
PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 |
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ETC |
PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 |
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