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Transistor |
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PNP SILICON TRANSISTOR |
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Ultrasonic Sensor |
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ETC 1 |
Ultrasonic Sensor User Guide Features � Stable performance (Xtal.) � Accurate distance measuremen |
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Complementary Power Transistors • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • Lead Formed Version in 16 mm Tape and Reel for Surface Mount • • • • • • (“T4” Suffix) Electri |
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Transistor |
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NPN Silicon Bipolar Transistor |
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NPN Transistor off Current at VCB=60V Emitter Cutoff Current at VEB=5V Collector Saturation Voltage at IC=50mA, IB=5mA Gain Bandwidth Product at VCE=12V, IC=2mA Output Capacitance at VCB=12V, f=1MHz COB 2 3.5 pF fT 180 MHz VCE(sat) 0.4 V IEBO 0.1 µA ICBO 0.1 µA V(B |
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Low-frequency amplification shell rated bipolar transistors 0.7 4 4 V V V S S MHz ×îСֵ 400 700 9 100 50 10 50 ×î´óÖµ . µ¥Î» V V V A A A VCEO(SUS) V(BR)CBO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat)(1) IC=2A, VCE(sat)(2) IC=8A, VBE(sat) tf ts fT IC=2A, VCC=24V IC=5A, IB1=-IB2=1A VCC=24V IC=5A, IB1=-IB |
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Infrared Distance Ranging Sensor Power Supply: 5VDC Supply current DC <25mA Maximum load current 100mA (Open-collector NPN pulldown output) Response time <2ms Diameter: 17MM Pointing angle: ≤ 15 °, effective from 3-80CM Adjustable Detection of objects: transparent or o |
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PNP Transistor High current Low voltage 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC ICM hFE Quick reference data Parameter Conditions collector-emitter voltage collector current (DC) op |
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NPN Transistor |
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TRANSISTOR |
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Silicon NPN Power Transistor ee Datasheet http://www.datasheet4u.com/ INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC4977 MAX UNIT VCEO( |
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NPN Silicon Transistor Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=40V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage at IC=100mA, IB=10mA Gain Bandwidth Product at VCE=6V, IC=10mA Output Capacitance at VCB=6V, f=1MHz Noise Figure at VCE=6V, |
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Low-frequency amplification shell rated bipolar transistors µçÌØÐÔ Ïî ¼¯µç«¡ª»ù÷´©Ñ¹ ·¢É伫¡ª»ù÷´©µçѹ ¼¯µç«¡ª»ù ·´Ïò©Á÷ ·¢É伫¡ª»ù´Ïò©µçÁ÷ Ö±Á÷µçÔöÒæ ¼¯µç«¡ª ·¢Éä±¥ºÍѹ½ »ù¼«¡ª ·¢Éä±¥ºÍѹ½µ ×èÄá¶þ¼«¹ÜÕýÏòѽµ ϽµÊ±¼ä Öü´æʱ¼ä ÌØÕ÷ƵÂÊ (Tc=25¡æ Ä¿ V(BR)CBO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) |
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Amplifier Transistors E = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 150°C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 10 V) B |
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voltage transformer operating guide A， R′= V =50K Ω I for example: V=220V，I=1.1mA， R′= V =200 kΩ I To improve reliability, the current-limiting resistor selected usually is greater than its 4times the rated power, and generally use a high temperature coefficient metal film resistor. |
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Ultrasonic distance sensor o increase flexibility, increase range, and to reduce costs still further. As such, the SRF05 is fully compatible with the SRF04. Range is increased from 3 meters to 4 meters. A new operating mode (tying the mode pin to ground) allows the SRF05 to us |
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Silicon NPN Power Transistors =25 unless otherwise specified www.datasheet4u.com SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-base breakdown voltage IE=200mA; IC=0 VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A VBEsat Base-emitter saturation voltage IC=4A; I |
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