| No. | Partie # | Fabricant | Description | Fiche Technique |
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ETC |
0.5AMP HIGH VOLTAGE NPN TRANSISTOR |
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ETC |
TV ELECTRONIC CHANNEL SELECTION CIRCUIT low off and on leakage currents, reducing switching errors. Document Number: 70608 03-Aug-99 6-3 AN501 Vishay Siliconix TABLE 1. CAPACITANCE VALUE FOR 16ĆCHANNEL MULTIPLEXERS Parameter CS(off) (pF) CD(off) (pF) DG526 10 65 DG506A 6 46 DG508A 5 2 |
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SCREW |
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ETC |
ISO/IEC JTC 1/SIC 2/WG 3 7-bit and 8-bit codes and their extension SECRETARIAT : ELOT has waited for long for character 10/14, which is the Greek Question mark. The fact that it looks like the Latin semicolon is not an argument for not including this character into the G1 set. In many cases in a Greek text, the Greek Question Mark is |
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ETC |
NPN SILICON RF POWER TRANSISTORS 7 13.08 0.495 0.515 B 10.77 11.10 0.424 0.437 C 5.46 8.13 0.215 0.320 D 0.762 1.17 0.030 0.046 E 2.29 3.43 0.090 0.135 G 4.70 5.46 0.185 0.215 H - 1.98 - 0.078 J 9.53 11,56 0.375 0.455 K 9.02 12.19 Ol55 0.480 L 2.29 2.79 0.0 0.11 N 4.19 0. |
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ETC |
IC DIVISION |
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ETC |
CATV Coaxial Cable 100 m) f = 5 MHz f = 50 MHz f = 200 MHz f = 470 MHz f = 860 MHz f = 1000 MHz f = 1750 MHz f = 2050 MHz f = 2150 MHz f = 3000 MHz Return Loss (dB) 5 – 470 MHz 470 – 862 MHz 862 –2150 MHz > 25.00dB > 23.00dB > 20.00dB 22 31 80dB 75dB > 25.00dB > 23.0 |
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ETC |
NN5099K / NN5199K |
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ETC |
0.5AMP HIGH VOLTAGE NPN TRANSISTOR |
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ETC |
0.5AMP HIGH VOLTAGE NPN TRANSISTOR |
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ETC |
N-Channel Power MOSFET l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and res |
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ETC |
HiPer FET Power MOSFETs Q-CLASS • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Rated for unclamped Inductive load switching (UIS) rated • Molding epoxies meet UL 94 V-0 flamma |
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ETC |
N-Channel Power MOSFET l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and res |
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ETC |
N-Channel Power MOSFET • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Rated for unclamped Inductive load switching (UIS) rated • Molding epoxies meet UL 94 V-0 flamma |
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ETC |
NPN SILICON RF SMALL SIGNAL TRANSISTORS |
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ETC |
(SMOS21N50 / SMOS26N50) Power MOSFETs 50 Power MOSFETs (TJ=25oC, unless otherwise specified) Symbol VDSS VGS(th) IGSS IDSS Test Conditions VGS=0V; ID=250uA VDS=VGS; ID=4mA VGS=±20VDC; VDS=0 VDS=0.8VDSS; TJ=25oC VGS=0V; TJ=125oC Characteristic Values min. typ. max. 500 2 4 ±100 200 1 Unit |
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ETC |
(SMOS21N50 / SMOS26N50) Power MOSFETs 50 Power MOSFETs (TJ=25oC, unless otherwise specified) Symbol VDSS VGS(th) IGSS IDSS Test Conditions VGS=0V; ID=250uA VDS=VGS; ID=4mA VGS=±20VDC; VDS=0 VDS=0.8VDSS; TJ=25oC VGS=0V; TJ=125oC Characteristic Values min. typ. max. 500 2 4 ±100 200 1 Unit |
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ETC |
(SMOS44N50 / SMOS48N50) POWER MOSFETS s IAR EAR dv/dt 100A/us; VDD VDSS' 5 150 C; RG=2 520 -55...+150 150 -55...+150 o PD TJ TJM Tstg TL VISOL TC=25oC W C 1.6mm(0.063 in.) from case for 10s 50/60Hz,RMS IISOL 1mA t=1 min t=1 s 2500 3000 1.5/13 1.5/13 30 o C V~ Md Mounting |
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ETC |
(SMOS44N50 / SMOS48N50) POWER MOSFETS s IAR EAR dv/dt 100A/us; VDD VDSS' 5 150 C; RG=2 520 -55...+150 150 -55...+150 o PD TJ TJM Tstg TL VISOL TC=25oC W C 1.6mm(0.063 in.) from case for 10s 50/60Hz,RMS IISOL 1mA t=1 min t=1 s 2500 3000 1.5/13 1.5/13 30 o C V~ Md Mounting |
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ETC |
Transistor |
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