No. | Partie # | Fabricant | Description | Fiche Technique |
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ETC |
gallium arsenide infrared emitting diode .Wide gap between light emitter and detector(3.1mm) .High sensing accuracy .PWB mounting type package Pb free ■ Applications: .Copier .Printer .Facsimile .Ticket vending machine .Opto-electronic switch 04/07/22 08:35 AM 2 8102.doc EVERLIGHT E |
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ETCTI |
Futurebus+ Arbitration Bus Controller (Rev. A) |
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ETC |
LIGHT REFLECTION SWITCH |
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ETC |
An infrared Emitting Diode and an NPN silicon phototransistor : • Fast response time • High analytic • Cut-off visible wavelength λp=840nm • High sensitivity • Pb free █ Description : The ITR9909 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optica |
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ETC |
Vitreous Enamelled Wirewound Resistors 1 to 100k 0.5 to 10k 0.5 to 15k 0.5 to 20k 1 to 56k 1 to 100k 0.1 to 10k 0.1 to 15k 0.1 to 20k 0.15 to 56k 0.2 to 100k ≥5 ohms < 10 ohms: ±400 ≥10 ohms: ±200 Applicable to commercial and approved ranges Limiting element voltage volts Standard value |
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