| No. | Partie # | Fabricant | Description | Fiche Technique |
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ETC |
High Voltage - High Power GaN-HEMT ・High Voltage Operation : VDS=50V ・High Gain: 15dB(typ.) at Pout=42dBm(Avg.) ・High Efficiency: 35%(typ.) at Pout=42dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability EGN21A090IV High Voltage - High Power GaN-HEMT DESCRIPTION Th |
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ETC |
GN Package XX-Lead Plastic SSOP 41) .045 ± .005 .337 – .344* (8.560 – 8.738) 20 19 18 17 16 15 14 13 12 11 .058 (1.473) REF .254 MIN .150 – .165 .229 – .244 (5.817 – 6.198) .150 – .157** (3.810 – 3.988) .0165 ± .0015 RECOMMENDED SOLDER PAD LAYOUT .0250 BSC 1 .0532 – .0688 (1. |
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