No. | Partie # | Fabricant | Description | Fiche Technique |
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ETC |
SINGLE CHIP CMOS LSI CIRCUIT |
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ETC |
SINGLE CHIP CMOS LSI CIRCUIT |
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ETC |
SINGLE CHIP CMOS LSI CIRCUIT |
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ETC |
SINGLE CHIP CMOS LSI CIRCUIT |
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ETC |
SINGLE CHIP CMOS LSI CIRCUIT |
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ETC |
N-Channel Power MOSFET l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and res |
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ETC |
N-Channel Power MOSFET • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Rated for unclamped Inductive load switching (UIS) rated • Molding epoxies meet UL 94 V-0 flamma |
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