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ETC |
SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS * Fast switching PARTMARKING DETAILS FMMT2222 1BZ FMMT2222A 1P FMMT2222R 2P FMMT2222AR 3P COMPLEMENTARY TYPES FMMT2222 FMMT2907 FMMT2222A FMMT2907A FMMT2222 FMMT2222A C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Coll |
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ETC |
SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE PAIR (SERIES) |
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ETC |
SOT23 SILICON VOLTAGE REGULATOR DIODES ent VZ@IZT VZ(%/°C) =0.25mAΩ Ω VOLTS VOLTS µA V mA (A) (B) 5.6 6 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 20 20 20 20 20 20 20 20 20 20 20 9.5 9 8.5 7.8 7.4 7 6.6 6.2 5.6 5.2 5 4.6 4.5 4.2 3.8 11 7 7 5 6 8 8 10 17 |
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ETC |
SOT23 SILICON VOLTAGE REGULATOR DIODES ent VZ@IZT VZ(%/°C) =0.25mAΩ Ω VOLTS VOLTS µA V mA (A) (B) 5.6 6 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 20 20 20 20 20 20 20 20 20 20 20 9.5 9 8.5 7.8 7.4 7 6.6 6.2 5.6 5.2 5 4.6 4.5 4.2 3.8 11 7 7 5 6 8 8 10 17 |
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ETC |
SOT23 SILICON VOLTAGE REGULATOR DIODES ent VZ@IZT VZ(%/°C) =0.25mAΩ Ω VOLTS VOLTS µA V mA (A) (B) 5.6 6 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 20 20 20 20 20 20 20 20 20 20 20 9.5 9 8.5 7.8 7.4 7 6.6 6.2 5.6 5.2 5 4.6 4.5 4.2 3.8 11 7 7 5 6 8 8 10 17 |
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ETC |
SOT23 PNP SILICON PLANAR SWITCHING TRANSISTOR * Fast switching COMPLIMENTARY TYPES - FMMT2907 - FMMT2907A PARTMARKING DETAIL FMMT2907 FMMT2907A FMMT2907R FMMT2907AR FMMT2907 FMMT2907A FMMT2222 FMMT2222A 2BZ 2F 4P 5P FMMT2907 -40 -5 -600 330 -55 to +150 C B SOT23 E ABSOLUTE MAXIMUM |
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ETC |
SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTOR X. MAX. UNIT CONDITIONS V V V IC=-1mA, IB=0 IC=-0.1mA, IE=0 IE=-0.1mA, IC=0 VEB(off) =-0.4V VEB(off) =-0.4V µA VCE=-35V µA VCE=-35V 150 -0.4 -0.75 300 -0.4 -0.75 V V V V IC=-0.1mA, VCE=-1V IC=-1mA, VCE=-1V IC=-10mA, VCE=-1V IC=-150mA,VCE=-2V* IC= |
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ETC |
SOT23 SILICON VOLTAGE REGULATOR DIODES ent VZ@IZT VZ(%/°C) =0.25mAΩ Ω VOLTS VOLTS µA V mA (A) (B) 5.6 6 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 20 20 20 20 20 20 20 20 20 20 20 9.5 9 8.5 7.8 7.4 7 6.6 6.2 5.6 5.2 5 4.6 4.5 4.2 3.8 11 7 7 5 6 8 8 10 17 |
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ETC |
SOT23 SILICON VOLTAGE REGULATOR DIODES ent VZ@IZT VZ(%/°C) =0.25mAΩ Ω VOLTS VOLTS µA V mA (A) (B) 5.6 6 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 20 20 20 20 20 20 20 20 20 20 20 9.5 9 8.5 7.8 7.4 7 6.6 6.2 5.6 5.2 5 4.6 4.5 4.2 3.8 11 7 7 5 6 8 8 10 17 |
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ETC |
SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR * 60 Volt VCEO 7 FMMT2484 E C PARTMARKING DETAIL 4G B SOT23 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg MAX. UNIT V V V 10 10 10 0.35 0.95 30 100 20 175 200 250 500 µA ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Vo |
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ETC |
SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS ansfer Ratio Output Capacitance Cobo Turn-on Time ton Turn-off Time Storage Time toff ts FMMT2369 FMMT2369A UNIT CONDITIONS. MIN. MAX. MIN. MAX. 40 40 V IC=10µA, IE=0 15 40 4.5 400 0.25 0.7 40 20 20 4 12 18 13 0.85 120 0.7 40 20 4 12 18 13 pF ns ns n |
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ETC |
SOT23 PNP SILICON PLANAR SWITCHING TRANSISTOR * Fast switching COMPLIMENTARY TYPES - FMMT2907 - FMMT2907A PARTMARKING DETAIL FMMT2907 FMMT2907A FMMT2907R FMMT2907AR FMMT2907 FMMT2907A FMMT2222 FMMT2222A 2BZ 2F 4P 5P FMMT2907 -40 -5 -600 330 -55 to +150 C B SOT23 E ABSOLUTE MAXIMUM |
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ETC |
SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTOR X. MAX. UNIT CONDITIONS V V V IC=-1mA, IB=0 IC=-0.1mA, IE=0 IE=-0.1mA, IC=0 VEB(off) =-0.4V VEB(off) =-0.4V µA VCE=-35V µA VCE=-35V 150 -0.4 -0.75 300 -0.4 -0.75 V V V V IC=-0.1mA, VCE=-1V IC=-1mA, VCE=-1V IC=-10mA, VCE=-1V IC=-150mA,VCE=-2V* IC= |
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ETC |
SOT23 SILICON VOLTAGE REGULATOR DIODES ent VZ@IZT VZ(%/°C) =0.25mAΩ Ω VOLTS VOLTS µA V mA (A) (B) 5.6 6 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 20 20 20 20 20 20 20 20 20 20 20 9.5 9 8.5 7.8 7.4 7 6.6 6.2 5.6 5.2 5 4.6 4.5 4.2 3.8 11 7 7 5 6 8 8 10 17 |
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ETC |
GaAs Microwave Static Frequency Divider • Operation to 12.0 GHz • Input Frequency divide by 8, OUT and OUT • -5V (or+5V) DC Single Power Supply • External 50 ohm Load Driving Capability • Small 10 pin Hermetic SMT-10 Package (VJ) • Tape and Reel available DESCRIPTION The FMM1103VJ is a Ga |
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ETC |
SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS ansfer Ratio Output Capacitance Cobo Turn-on Time ton Turn-off Time Storage Time toff ts FMMT2369 FMMT2369A UNIT CONDITIONS. MIN. MAX. MIN. MAX. 40 40 V IC=10µA, IE=0 15 40 4.5 400 0.25 0.7 40 20 20 4 12 18 13 0.85 120 0.7 40 20 4 12 18 13 pF ns ns n |
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ETC |
SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR * 60 Volt VCEO 7 FMMT2484 E C PARTMARKING DETAIL 4G B SOT23 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg MAX. UNIT V V V 10 10 10 0.35 0.95 30 100 20 175 200 250 500 µA ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Vo |
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ETC |
SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS X h FE nA V CE=30V, V BE(off) =3V nA V CE=30V, V EB(off) =3V I C=0.1mA, V CE=1V* I C=1mA, V CE=1V* I C=10mA, V CE=1V* I C=50mA, V CE=1V* I C=100mA, V CE=1V* V V V V I C=10mA, I B=1mA* I C=50mA, I B=5mA* I C=10mA, I B=1mA* I C=50mA, I B=5mA* 150 30 |
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ETC |
SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS X h FE nA V CE=30V, V BE(off) =3V nA V CE=30V, V EB(off) =3V I C=0.1mA, V CE=1V* I C=1mA, V CE=1V* I C=10mA, V CE=1V* I C=50mA, V CE=1V* I C=100mA, V CE=1V* V V V V I C=10mA, I B=1mA* I C=50mA, I B=5mA* I C=10mA, I B=1mA* I C=50mA, I B=5mA* 150 30 |
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ETC |
SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES 350 300 280 Min. 6.1 9.0 10.8 13.5 19.8 24.3 29.3 Max. 7.5 11.0 13.2 16.5 24.2 29.7 36.3 Turning Ratio C2 / C30 f=1MHz Min. Max. 2.5 3.3 2.6 3.3 2.6 3.3 2.6 3.3 2.7 3.3 2.7 3.3 2.7 3.3 Partmark Detail 6R 6G 6H 6J 6L 6M 6N * SELECTED DEVICE RANGE |
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