ETC EMI fiche technique

No.	Partie #	Fabricant	Description
1	TIL209	ETC	Visible Light Emitting Diodes
2	LMV862	ETCTI	LMV861/LMV862 30 MHz Low Power CMOS EMI Hardened Operational Amplifiers (Rev. C)
3	bq24747	Texas Instruments	Multi-Chemistry Battery Charger 1 • NMOS-NMOS Synchronous Buck Converter with 300 kHz Frequency and >95% Efficiency • 30-ns Minimum Driver Dead-time and 99.5% Maximum Effective Duty Cycle • High-Accuracy Voltage and Current Regulation – ±0.5% Charge Voltage Accuracy – ±3% Charge Cu
4	GC283507-ETC4	CT Micro	SMD Type Green Emitter  Top view 2835 package  Viewing Angle = 600  Compatible with infrared and vapor phase reflow solder process  High reliability  Ultra bright Green  RoHS compliance Applications  Optical indicator.  Switch and Symbol Display. GC283507-ETC4 SM
5	LP8860-Q1	Texas Instruments	Low-EMI Automotive LED Driver •1 Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature • Input Voltage Operating Range 3 V to 48 V • Four High-Precision Current Sinks – Cu
6	AD484M1644VTA-10L	ETC	Ascend Semiconductor Corporation(64Mb SDRAM) • Fully synchronous to positive clock edge • Single 3.3V +/- 0.3V power supply • LVTTL compatible with multiplexed address • Industrial temperature available • Programmable Burst Length ( BL ) - 1,2,4,8 or full page • Programmable CAS Latency ( CL )
7	OP245PS	ETC	Plastic Point Source In fra red Emitting Diode • Point source irradiance pattern s peak • Wavelength matched to silicon’ • Fast switching speed • Side-looking package for space limited applications response Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Reverse Voltage . . . . . .
8	28B0562-200	ETC	(2000 Series) Ferrites for EMI Suppression d in 1876 Steward is a leading producer of ferrite and related materials used in the electronics, copier, telecommunications, military and automotive industries. Ferrite for EMI suppressor products is nickel zinc and exhibit magnetic properties that
9	MQ-3	ETC	Semiconductor Sensor PH Character Sensing Resistance Rs Sensitivity S Slope α Tem. Humidity Condition Standard test circuit Preheat time Ps=Vc2×Rs/(Rs+RL)2 MQ-3 Semiconductor Bakelite (Black Bakelite) Alcohol gas 0.04-4mg/l alcohol ≤24V DC 5.0V±0.2V AC or DC
10	bq24750A	Texas Instruments	Host-Controlled Multi-Chemistry Battery Charger 1 • NMOS-NMOS Synchronous Buck Converter with 300 kHz Frequency and >95% Efficiency • 30-ns Minimum Driver Dead-time and 99.5% Maximum Effective Duty Cycle • High-Accuracy Voltage and Current Regulation – ±0.5% Charge Voltage Accuracy – ±3% Charge Cu
11	BQ25708	Texas Instruments	SMBus Multi-Chemistry Battery Buck-Boost Charge Controller •1 Charge 1- to 4-Cell Battery From Wide Range of Input Sources – 3.5-V to 24-V Input Operating Voltage – Supports USB2.0, USB 3.0, USB 3.1 (Type C), and USB_PD Input Current Settings – Seamless Transition Between Buck and Boost Operation – Input cur
12	H23A2	ETC	MATCHED EMITTED DETECTOR
13	L-53SF4C	ETC	T-1 3/4 INFRA RED EMITTING DIODE !MECHANICALLY AND SPECTRALLY MATCHED Description F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 and SF6 and SF7 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. TO THE L-51P3C PHOTOTRANSISTOR. !BOTH WATER CLEAR LENS AND B
14	L-53SF6BT	ETC	T-1 3/4 INFRA RED EMITTING DIODE !MECHANICALLY AND SPECTRALLY MATCHED Description F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 and SF6 and SF7 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. TO THE L-51P3C PHOTOTRANSISTOR. !BOTH WATER CLEAR LENS AND B
15	L-53SF6C	ETC	T-1 3/4 INFRA RED EMITTING DIODE !MECHANICALLY AND SPECTRALLY MATCHED Description F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 and SF6 and SF7 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. TO THE L-51P3C PHOTOTRANSISTOR. !BOTH WATER CLEAR LENS AND B
16	L-53SF7C	ETC	T-1 3/4 INFRA RED EMITTING DIODE !MECHANICALLY AND SPECTRALLY MATCHED Description F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 and SF6 and SF7 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. TO THE L-51P3C PHOTOTRANSISTOR. !BOTH WATER CLEAR LENS AND B
17	ADP1	ETC	PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 Silicon Piezo resistance strain gauge Anode junction Pressure Glass base 0 0 {0} 49 {0.5} 98.1 {1} Pressure (gauge pressure), (kPa {kgf/cm2}) TYPI
18	ADP1261	ETC	PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 Silicon Piezo resistance strain gauge Anode junction Pressure Glass base 0 0 {0} 49 {0.5} 98.1 {1} Pressure (gauge pressure), (kPa {kgf/cm2}) TYPI
19	AD484M1644VTA	ETC	Ascend Semiconductor Corporation(64Mb SDRAM) • Fully synchronous to positive clock edge • Single 3.3V +/- 0.3V power supply • LVTTL compatible with multiplexed address • Industrial temperature available • Programmable Burst Length ( BL ) - 1,2,4,8 or full page • Programmable CAS Latency ( CL )
20	AD484M1644VTA-8L	ETC	Ascend Semiconductor Corporation(64Mb SDRAM) • Fully synchronous to positive clock edge • Single 3.3V +/- 0.3V power supply • LVTTL compatible with multiplexed address • Industrial temperature available • Programmable Burst Length ( BL ) - 1,2,4,8 or full page • Programmable CAS Latency ( CL )