logo

ETC EGN DataSheet

No. Partie # Fabricant Description Fiche Technique
1
EGN21A090IV

ETC
High Voltage - High Power GaN-HEMT

・High Voltage Operation : VDS=50V
・High Gain: 15dB(typ.) at Pout=42dBm(Avg.)
・High Efficiency: 35%(typ.) at Pout=42dBm(Avg.)
・Broad Frequency Range : 2100 to 2200MHz
・Proven Reliability EGN21A090IV High Voltage - High Power GaN-HEMT DESCRIPTION Th
Datasheet



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact