ETC DP1 fiche technique

No.	Partie #	Fabricant	Description
1	SN75DP120	Texas Instruments	DisplayPort 1:1 Dual-Mode Repeater 1 • DP Signal Repeater Supporting Dual-Mode DisplayPort DP1.1a (DP++) Signaling • Supports Data Rates up to 2.7Gbps • Participates in DP Link Training to set Output Voltage and Pre-Emphasis Levels • Automatic Selectable Equalization for Improved Sign
2	ADP1	ETC	PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 Silicon Piezo resistance strain gauge Anode junction Pressure Glass base 0 0 {0} 49 {0.5} 98.1 {1} Pressure (gauge pressure), (kPa {kgf/cm2}) TYPI
3	ADP1261	ETC	PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 Silicon Piezo resistance strain gauge Anode junction Pressure Glass base 0 0 {0} 49 {0.5} 98.1 {1} Pressure (gauge pressure), (kPa {kgf/cm2}) TYPI
4	DP104	ETC	DP104
5	ADP1111	ETC	PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 Silicon Piezo resistance strain gauge Anode junction Pressure Glass base 0 0 {0} 49 {0.5} 98.1 {1} Pressure (gauge pressure), (kPa {kgf/cm2}) TYPI
6	ADP1131	ETC	PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 Silicon Piezo resistance strain gauge Anode junction Pressure Glass base 0 0 {0} 49 {0.5} 98.1 {1} Pressure (gauge pressure), (kPa {kgf/cm2}) TYPI
7	ADP1211	ETC	PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 Silicon Piezo resistance strain gauge Anode junction Pressure Glass base 0 0 {0} 49 {0.5} 98.1 {1} Pressure (gauge pressure), (kPa {kgf/cm2}) TYPI
8	ADP1231	ETC	PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 Silicon Piezo resistance strain gauge Anode junction Pressure Glass base 0 0 {0} 49 {0.5} 98.1 {1} Pressure (gauge pressure), (kPa {kgf/cm2}) TYPI
9	ADP1291	ETC	PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 Silicon Piezo resistance strain gauge Anode junction Pressure Glass base 0 0 {0} 49 {0.5} 98.1 {1} Pressure (gauge pressure), (kPa {kgf/cm2}) TYPI
10	SN75DP139	Texas Instruments	DisplayPort to TMDS Level-Shifting Re-Driver •1 DisplayPort Physical Layer Input Port to TMDS Physical Layer Output Port • Integrated TMDS Level-Shifting Re-driver With Receiver Equalization • Supports Data Rates up to 3.4 Gbps • Achieves HDMI 1.4b Compliance • 3D HDMI Support With TMDS Clock R
11	ADP1121	ETC	PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 Silicon Piezo resistance strain gauge Anode junction Pressure Glass base 0 0 {0} 49 {0.5} 98.1 {1} Pressure (gauge pressure), (kPa {kgf/cm2}) TYPI
12	ADP1132	ETC	PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 Silicon Piezo resistance strain gauge Anode junction Pressure Glass base 0 0 {0} 49 {0.5} 98.1 {1} Pressure (gauge pressure), (kPa {kgf/cm2}) TYPI
13	ADP1141	ETC	PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 Silicon Piezo resistance strain gauge Anode junction Pressure Glass base 0 0 {0} 49 {0.5} 98.1 {1} Pressure (gauge pressure), (kPa {kgf/cm2}) TYPI
14	ADP1151	ETC	PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 Silicon Piezo resistance strain gauge Anode junction Pressure Glass base 0 0 {0} 49 {0.5} 98.1 {1} Pressure (gauge pressure), (kPa {kgf/cm2}) TYPI
15	ADP1161	ETC	PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 Silicon Piezo resistance strain gauge Anode junction Pressure Glass base 0 0 {0} 49 {0.5} 98.1 {1} Pressure (gauge pressure), (kPa {kgf/cm2}) TYPI
16	ADP1171	ETC	PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 Silicon Piezo resistance strain gauge Anode junction Pressure Glass base 0 0 {0} 49 {0.5} 98.1 {1} Pressure (gauge pressure), (kPa {kgf/cm2}) TYPI
17	ADP1181	ETC	PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 Silicon Piezo resistance strain gauge Anode junction Pressure Glass base 0 0 {0} 49 {0.5} 98.1 {1} Pressure (gauge pressure), (kPa {kgf/cm2}) TYPI
18	ADP1191	ETC	PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 Silicon Piezo resistance strain gauge Anode junction Pressure Glass base 0 0 {0} 49 {0.5} 98.1 {1} Pressure (gauge pressure), (kPa {kgf/cm2}) TYPI
19	ADP1201	ETC	PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 Silicon Piezo resistance strain gauge Anode junction Pressure Glass base 0 0 {0} 49 {0.5} 98.1 {1} Pressure (gauge pressure), (kPa {kgf/cm2}) TYPI
20	ADP1221	ETC	PRECISION SEMICONDUCTOR PRESSURE SENSOR d current; ambient temperature: 25°C 77°F 100 Output voltage, mV 50 Silicon Piezo resistance strain gauge Anode junction Pressure Glass base 0 0 {0} 49 {0.5} 98.1 {1} Pressure (gauge pressure), (kPa {kgf/cm2}) TYPI