No. | Partie # | Fabricant | Description | Fiche Technique |
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ETC |
New Generation EXview HAD CCD Ultrahigh-Sensitivity Near Infrared Structure increased sensitivity not only to visible light, but in the near infrared region as well. Compared to Sony’s conventional ICX258/ 259 products, the ICX658/659 achieve increased sensitivities of +10% in the visible range, and +4.5 dB in the near infra |
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ETC |
New Generation EXview HAD CCD Ultrahigh-Sensitivity Near Infrared Structure increased sensitivity not only to visible light, but in the near infrared region as well. Compared to Sony’s conventional ICX258/ 259 products, the ICX658/659 achieve increased sensitivities of +10% in the visible range, and +4.5 dB in the near infra |
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ETC |
New Generation EXview HAD CCD Ultrahigh-Sensitivity Near Infrared Structure increased sensitivity not only to visible light, but in the near infrared region as well. Compared to Sony’s conventional ICX258/ 259 products, the ICX658/659 achieve increased sensitivities of +10% in the visible range, and +4.5 dB in the near infra |
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ETC |
700 - 1000 MHz Linear Power Amplifier • Typical POUT of 31 dBm • High linearity • Low power consumption • Single +5 V supply • 8-pin LCC 8 x 8 mm package VCC1 8 VCC2 4 Driver Amp Bias Power Amp Bias RFIN 2 Input Match PA Interstage Match PA Output Match 6 RFOUT GND 1, 3, 5 |
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ETC |
New Generation EXview HAD CCD Ultrahigh-Sensitivity Near Infrared Structure increased sensitivity not only to visible light, but in the near infrared region as well. Compared to Sony’s conventional ICX258/ 259 products, the ICX658/659 achieve increased sensitivities of +10% in the visible range, and +4.5 dB in the near infra |
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ETC |
1700 - 2200 MHz Linear Power Amplifier • Typical POUT of 28.5 dBm • High linearity • Low power consumption • Single +5 V supply • LCC (8-pin, 8 x 8 mm) package VREF 3 VCC1 8 VCC2 4 VCC1 8 GND RFIN VREF 1 2 3 4 7 6 5 GND RFOUT RFIN 2 Driver Stage Bias Power Stage Bias Input Match |
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ETC |
1400 - 2500 MHz Linear Power Amplifier Driver that provide superb performance and ease of use in a low-cost Surface-Mounted Technology (SMT) package. This Gallium Arsenide (GaAs) Heterojunction Bipolar Transistor (HBT) power amplifier driver was developed and optimized for extreme linear perform |
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