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ETC |
High Performance CCFL Controller 14 15 16 NDRV VIN REF CT FSW DIM ENA NC OVP CMP FB LPWM LCT TIMR GND PDRV N- MOS IC ， +4.5----18V. IC 3.5V . RC ，. ，, ， 2.3V, 2.3V ; 2.3V . PWM , 0---2V, 0V 100%; 2V 0%, DIM GND , PWM . IC ON/OFF ，OFF：0---1V；ON：2---5V .(ENA ) , 2.0V， |
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Texas Instruments |
Dual Pixel LVDS Display Interface 1 •2 Complies with OpenLDI Specification for Digital Display Interfaces • 32.5 to 112/170MHz Clock Support for DS90C387, 40 to 112MHz Clock Support for DS90CF388 • Supports SVGA through QXGA Panel Resolutions • Drives Long, Low Cost Cables • Up to 5. |
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Texas Instruments |
FET BLDC Driver • Three-phase BLDC motor driver with integrated sensorless motor control algorithm – Code-free Field Oriented Control (FOC) – Analog, PWM and freq. based speed input modes: available only when MCF8315A is configured as a standby device (DEV_MODE = 0b |
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ETC |
16/000 Usable PLD Gate QuickRAM ESP Combining Performance/ Density and Embedded RAM up to 16 simultaneous inputs and five outputs within a cell that can be fragmented into five independent cells. Each cell has a fanin of 29 including register and control lines (see Figure 3). WDATA RAM Module (1,152 bits) RDATA WADDR RADDR RAM |
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ETC |
16/000 Usable PLD Gate QuickRAM ESP Combining Performance/ Density and Embedded RAM up to 16 simultaneous inputs and five outputs within a cell that can be fragmented into five independent cells. Each cell has a fanin of 29 including register and control lines (see Figure 3). WDATA RAM Module (1,152 bits) RDATA WADDR RADDR RAM |
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ETC |
16/000 Usable PLD Gate QuickRAM ESP Combining Performance/ Density and Embedded RAM up to 16 simultaneous inputs and five outputs within a cell that can be fragmented into five independent cells. Each cell has a fanin of 29 including register and control lines (see Figure 3). WDATA RAM Module (1,152 bits) RDATA WADDR RADDR RAM |
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Texas Instruments |
Remote 8-Bit I/O Expander •1 Low Standby-Current Consumption of 10 μA Max • I2C to Parallel-Port Expander • Open-Drain Interrupt Output • Compatible With Most Microcontrollers • Latched Outputs With High-Current Drive Capability for Directly Driving LEDs • Latch-Up Performanc |
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Texas Instruments |
+3.3V Programmable LVDS Transmitter 1 •23 No Special Start-up Sequence Required Between Clock/Data and /PD Pins. Input Signal (Clock and Data) Can be Applied Either Before or After the Device is Powered. • Support Spread Spectrum Clocking Up to 100KHz Frequency Modulation & Deviations |
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Texas Instruments |
Quad-Channel Digital Isolators •1 25 and 150-Mbps Signaling Rate Options – Low Channel-to-Channel Output Skew; 1 ns Maximum – Low Pulse-Width Distortion (PWD); 2 ns Maximum – Low Jitter Content; 1 ns Typ at 150 Mbps • Selectable Default Output (ISO7240CF) • > 25-Year Life at Rated |
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ETC |
CERAMIC FILTERS ±10.00 ±7.50 ±6.00 ±4.50 ±3.00 ±2.00 ±15.00 ±12.50 ±10.00 ±7.50 ±6.00 ±4.50 ±3.00 ±2.00 ±30.00 ±24.00 ±20.00 ±15.00 ±12.50 ±10.00 ±9.00 ±7.50 ±30.00 ±24.00 ±20.00 ±15.00 ±12.50 ±10.00 ±9.00 ±7.50 40 40 40 40 40 40 40 40 50 50 50 50 50 50 50 50 27 |
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ETC |
FOUR POLE LOW PASS VCF |
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ETC |
16/000 Usable PLD Gate QuickRAM ESP Combining Performance/ Density and Embedded RAM up to 16 simultaneous inputs and five outputs within a cell that can be fragmented into five independent cells. Each cell has a fanin of 29 including register and control lines (see Figure 3). WDATA RAM Module (1,152 bits) RDATA WADDR RADDR RAM |
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ETC |
16/000 Usable PLD Gate QuickRAM ESP Combining Performance/ Density and Embedded RAM up to 16 simultaneous inputs and five outputs within a cell that can be fragmented into five independent cells. Each cell has a fanin of 29 including register and control lines (see Figure 3). WDATA RAM Module (1,152 bits) RDATA WADDR RADDR RAM |
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ETC |
16/000 Usable PLD Gate QuickRAM ESP Combining Performance/ Density and Embedded RAM up to 16 simultaneous inputs and five outputs within a cell that can be fragmented into five independent cells. Each cell has a fanin of 29 including register and control lines (see Figure 3). WDATA RAM Module (1,152 bits) RDATA WADDR RADDR RAM |
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ETC |
16/000 Usable PLD Gate QuickRAM ESP Combining Performance/ Density and Embedded RAM up to 16 simultaneous inputs and five outputs within a cell that can be fragmented into five independent cells. Each cell has a fanin of 29 including register and control lines (see Figure 3). WDATA RAM Module (1,152 bits) RDATA WADDR RADDR RAM |
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ETC |
16/000 Usable PLD Gate QuickRAM ESP Combining Performance/ Density and Embedded RAM up to 16 simultaneous inputs and five outputs within a cell that can be fragmented into five independent cells. Each cell has a fanin of 29 including register and control lines (see Figure 3). WDATA RAM Module (1,152 bits) RDATA WADDR RADDR RAM |
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ETC |
Coalescer wl O-Ring Metal Bowl Assembly, Plastic Float Drain Differential Indicator Manual Drain Brass Float Drain Plastic Float Drain Part Number N32-95-009 N32-95-950 N32-W1-DPi N32-95-182 N32-95-978 N32-95-973 Description Replacement Element Blanking Cap Ma |
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Texas Instruments |
+3.3V LVDS Receiver 1 •2 Automotive Grade Device, AEC-Q100 Grade 3 Qualified • Operating Temperature Range: –40°C to +85°C • 20 to 65 MHz Shift Clock Support • 50% Duty Cycle on Receiver Output Clock • Best –in –Class Set & Hold Times on RxOUTPUTs • Rx Power Consumption < |
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Texas Instruments |
Remote16-BIT I2C AND SMBus I/O Expander •1 I2C to Parallel-Port Expander • Open-Drain Interrupt Output • Low Standby-Current Consumption of 10 μA Max • Compatible With Most Microcontrollers • 400-kHz Fast I2C Bus • Address by Three Hardware Address Pins for Use of up to Eight Devices • Lat |
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ETC |
SmartACFLModem such as monitoring of local extension status without going off-hook, are also supported. Incorporating Conexant’s proprietary Digital Isolation Barrier (DIB) design (patent pending) and other innovative DAA features, the SmartDAA architecture simpli |
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