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ETC |
Schottky Barrier Rectifiers High s urge capacity. For us e in low voltage, high frequency inverters , free 1wheeling, and polarity protection applications . Metal s ilicon junction, m ajority carrier conduction. High current capacity, low forward voltage drop. Guard ring for ov |
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ETC |
25 AMPERE SINGLE-PHASE SILICON BRIDGE RECTIFIER High efficiency Surge overload rating - 300 amperes peak Body clad with metal (electrically isolated) or plastic Plastic encapsulation has Underwriters Laboratory flammability classification 94V-0 Universal multipurpose terminals 19.1 17.1 ~ ± termi |
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ETCTI |
3.125 Gbps 1:4 LVDS Repeater w/ Transmit Pre-Emphasis and Receive Equalization (Rev. D) |
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ETC |
High Operating Temperature Poly-carbonmonofluoride Lithium Coin Batteries uct. Voltage (V) 2.5 -10˚C 2.0 20˚C 60˚C ~ ~ 0 400 800 Duration (h) 1200 1600 LITHIUM HANDBOOK FEBRUARY 2002 This information is generally descriptive only and is not intended to make or imply any representation, guarantee or warranty with re |
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ETC |
20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER · Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency · High Surge Capability · High Current Capability and Low Forward Voltage Drop · For Use in Low Voltage, High Frequency Inverters, Free W |
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ETC |
20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER · Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency · High Surge Capability · High Current Capability and Low Forward Voltage Drop · For Use in Low Voltage, High Frequency Inverters, Free W |
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ETC |
25 AMPERE SINGLE-PHASE SILICON BRIDGE RECTIFIER High efficiency Surge overload rating - 300 amperes peak Body clad with metal (electrically isolated) or plastic Plastic encapsulation has Underwriters Laboratory flammability classification 94V-0 Universal multipurpose terminals 19.1 17.1 ~ ± termi |
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ETCTI |
DS10BR254 1.5 Gbps 1:4 LVDS Repeater (Rev. D) |
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ETC |
High Operating Temperature Poly-carbonmonofluoride Lithium Coin Batteries uct. Voltage (V) 2.5 -10˚C 2.0 20˚C 60˚C ~ ~ 0 400 800 Duration (h) 1200 1600 LITHIUM HANDBOOK FEBRUARY 2002 This information is generally descriptive only and is not intended to make or imply any representation, guarantee or warranty with re |
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ETC |
EE-P ROM |
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ETC |
Power Devices (IGBT) Sheet4U.net/ V PIM EconoPIMTM 600V,1200V TM V series PIM/Built-in converter and brake EconoPIM 600,1200 volts class Device type VCES Volts 600 600 600 600 600 600 600 600 600 600 600 600 600 1200 1200 1200 1200 1200 1200 1200 1200 1200 1200 1200 120 |
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ETC |
Schottky Barrier Rectifiers High s urge capacity. For us e in low voltage, high frequency inverters , free 1wheeling, and polarity protection applications . Metal s ilicon junction, m ajority carrier conduction. High current capacity, low forward voltage drop. Guard ring for ov |
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ETC |
Schottky Barrier Rectifiers High s urge capacity. For us e in low voltage, high frequency inverters , free 1wheeling, and polarity protection applications . Metal s ilicon junction, m ajority carrier conduction. High current capacity, low forward voltage drop. Guard ring for ov |
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ETC |
Schottky Barrier Rectifiers High s urge capacity. For us e in low voltage, high frequency inverters , free 1wheeling, and polarity protection applications . Metal s ilicon junction, m ajority carrier conduction. High current capacity, low forward voltage drop. Guard ring for ov |
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ETC |
25AMPERES SCHOTTKY BARRIER RECTIFIERS Plastic package has underwriters laboratory Flammability classification 94v-O. Flame retardant epoxy molding compound. Metal silicon junction, majority carrier condition. Low power loss, high efficiency. High current capability Guard |
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ETC |
25AMPERES SCHOTTKY BARRIER RECTIFIERS Plastic package has underwriters laboratory Flammability classification 94v-O. Flame retardant epoxy molding compound. Metal silicon junction, majority carrier condition. Low power loss, high efficiency. High current capability Guard |
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Texas Instruments |
Ultra Low Power 10.3 Gbps 2-Channel Repeater •1 Two Channel Repeaters for up to 10.3 Gbps – DS100BR210 : 2x Unidirectional Channels – DS100BR111 : 1x Bidirectional Lane • 10G-KR Bi-directional Interface Compatibility – Allows for Back-channel Communication and Training • Low 65 mW/channel (Typi |
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ETC |
SCHOTTKY DIE SPECIFICATION m2 1245 1025 1203 254 305 Mil2 49.01 40.3 41.1 10 12 A C B Top-side Metal SiO2 Passivation P+ Guard Ring Back-side Metal PS: (1)Cutting street width is around 80um(3.14mil). (2)Both of top-side and back-side metals are Ti/Ni/Ag. D |
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ETC |
Schottky Barrier Rectifiers High s urge capacity. For us e in low voltage, high frequency inverters , free 1wheeling, and polarity protection applications . Metal s ilicon junction, m ajority carrier conduction. High current capacity, low forward voltage drop. Guard ring for ov |
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ETC |
Schottky Barrier Rectifiers High s urge capacity. For us e in low voltage, high frequency inverters , free 1wheeling, and polarity protection applications . Metal s ilicon junction, m ajority carrier conduction. High current capacity, low forward voltage drop. Guard ring for ov |
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