| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
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ETC |
MOSFET |
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ETC |
2SK1745 |
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ETC |
2SK2129 q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 50ns q No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Applications 4.1±0.2 8.0±0.2 Solder Dip 13.7 –0.2 q Contactless relay |
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ETC |
2SK1356 |
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ETC |
Silicon N-Channel Junction FET |
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ETC |
2SK413 |
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ETC |
2SK538 |
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ETC |
MOS Field Effect Power Transistors |
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ETC |
Transistor |
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ETC |
2SK3004 °C 5 R DS(ON) – I D Characteristics (typical) 0.30 VGS =10V 0.25 10 4.5V 5 VGS = 4V 0 RDS (ON) (Ω) 25°C – 55°C 4 6 8 I D (A) I D (A) 0.20 0.15 0.10 0.05 0 0 5 10 15 20 0 0 2 0 5 10 15 18 VDS (V) VGS (V) I D (A) Re (yfs) – I D C |
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ETC |
2SK824 |
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ETC |
N-CHANNEL SILICON POWER MOS-FET |
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ETC |
N-CHANNEL SILICON POWER MOSFET High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 |
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ETC |
2SK1203 |
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ETC |
Power MOSFET |
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ETC |
Transistor W . Y W .T .T WW .100Y .100 .TW Vds W W8000V 100 M . OM W M O C . O W W C . Y W W .TW ±30V .TW 100 00Y WW .100Y.C M.TW Vgss W M . 1 M . O W O W Id(max) 5A .CO .TW WW WW .100Y.C M.TW WW .100Y.C M.TWN/P Ch. W N .100Y M O W O W WW 00Y.CO .TW WW .100Y.C |
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ETC |
Silicon N-Channel MOS FET |
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ETC |
2SK324 |
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ETC |
MOS Field Effect Power Transistors |
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|
ETC |
N-CHANNEL SILICON POWER MOSFET High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C |
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