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Texas Instruments |
65536 BY 8-BIT FLASH MEMORY n in temperature ranges of 0°C to 70°C (FML suffix), – 40°C to 85°C ( FME suffix), and – 40°C to 125°C ( FMQ suffix). TMS28F512A 65536 BY 8-BIT FLASH MEMORY SMJS514C – FEBRUARY 1994 – REVISED AUGUST 1997 FM PACKAGE ( TOP VIEW ) A12 A15 NC VPP VCC W |
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ETC |
M28F410 e Enable Byte/Word Organization Reset/Power Down/Boot Block Unlock Program & Erase Supply Voltage Supply Voltage 18 A0-A17 RP W E G M28F410 M28F420 DQ15A-1 15 DQ0-DQ14 BYTE VSS AI01130C March 1995 This is preliminary infor mationon a new produc |
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Texas Instruments |
262144 BY 8-BIT FLASH MEMORY cing (FM suffix) and a 32-lead thin small-outline package (DD suffix). TMS28F020 262144 BY 8-BIT FLASH MEMORY SMJS020C – OCTOBER 1994 – REVISED JANUARY 1998 FM PACKAGE ( TOP VIEW ) A12 A15 A16 VPP VCC W A17 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 4 3 2 1 32 |
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Texas Instruments |
65536 BY 16-BIT FLASH MEMORY 7 36 35 34 33 32 31 30 29 18 19 20 21 22 23 24 25 26 27 28 A13 A12 A11 A10 A9 VSS NC A8 A7 A6 A5 description The TMS28F210 is a 65 536 by 16-bit (1048 576-bit), programmable read-only memory that can be electrically bulk-erased and reprogrammed. |
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Texas Instruments |
1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY 32 VCC 31 W 30 NC 29 A14 28 A13 27 A8 26 A9 25 A11 24 G 23 A10 22 E 21 DQ7 20 DQ6 19 DQ5 18 DQ4 17 DQ3 FM PACKAGE ( TOP VIEW ) description The TMS28F010A is a 1048 576-bit, programmable read-only memory that can be electrically bulk-erased and re |
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Texas Instruments |
131072 BY 8-BIT FLASH MEMORY A9 A11 G A10 E DQ7 DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6 PIN NOMENCLATURE A0 – A16 DQ0 – DQ7 E G NC VCC VPP VSS W Address Inputs Inputs (programming) / Outputs Chip Enable Output Enable No Internal Connection 5-V Power Supply 12-V Power Supply† Ground Writ |
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Texas Instruments |
BOOT-BLOCK FLASH MEMORIES user-selectable block-erasure. The TMS28F200BZx flash memory is offered in a 44-pin PSOP. It is available in two temperature ranges: 0°C to 70°C and – 40°C to 85°C. device symbol nomenclature TMS28F200BZT 70 B DBJ L Temperature Range Designator L = |
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Texas Instruments |
BOOT-BLOCK FLASH MEMORIES user-selectable block-erasure. The TMS28F200BZx flash memory is offered in a 44-pin PSOP. It is available in two temperature ranges: 0°C to 70°C and – 40°C to 85°C. device symbol nomenclature TMS28F200BZT 70 B DBJ L Temperature Range Designator L = |
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Texas Instruments |
4194304-BIT SYNCHRONOUS FLASH MEMORY 20 DQ21 DQ22 DQ23 DQ24 DQ25 DQ26 DQ27 VDDE VSSE DQ28 DQ29 DQ30 DQ31 A –1 A0 A1 A2 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 1 64 2 63 3 62 4 61 5 60 6 59 7 58 8 57 9 56 10 55 11 54 12 53 13 52 14 51 15 50 16 49 17 48 18 47 19 46 20 45 21 44 22 |
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Texas Instruments |
BOOT-BLOCK FLASH MEMORIES user-selectable block erasure. The TMS28F400BZx flash memory is offered in a 44-pin PSOP. It is available in two temperature ranges: 0°C to 70°C and − 40°C to 85°C. device symbol nomenclature TMS28F400BZT 80 B DBJ L Temperature Range Designator L = |
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Texas Instruments |
BOOT-BLOCK FLASH MEMORIES user-selectable block erasure. The TMS28F400BZx flash memory is offered in a 44-pin PSOP. It is available in two temperature ranges: 0°C to 70°C and − 40°C to 85°C. device symbol nomenclature TMS28F400BZT 80 B DBJ L Temperature Range Designator L = |
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Texas Instruments |
CONCURRENT OPERATIONS AUTO-SELECT BOOT-BLOCK FLASH MEMORY that allows the user alternative read and program/erase voltages for maximum flexibility. Memory reads can be performed using VCC = 2.7 or 3.3 V for optimum power consumption or at VCC = 5 V for device performance. Erasing or programming the device c |
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Texas Instruments |
CONCURRENT OPERATIONS AUTO-SELECT BOOT-BLOCK FLASH MEMORY that allows the user alternative read and program/erase voltages for maximum flexibility. Memory reads can be performed using VCC = 2.7 or 3.3 V for optimum power consumption or at VCC = 5 V for device performance. Erasing or programming the device c |
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ETC |
CMOS RESET 1) Detection voltage: 0.1V step line-up 2.3~6.0V (Typ.) 2) High-accuracy detection voltage:±1.5% Max. 3) Ultra low current consumption: 0.8µA typ. 4) Nch open drain output (BD48XXG/FVE series), CMOS output (BD49XXG/FVE series) 5) Small EMP5, SMP5C2 p |
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ETC |
CMOS RESET 1) Detection voltage: 0.1V step line-up 2.3~6.0V (Typ.) 2) High-accuracy detection voltage:±1.5% Max. 3) Ultra low current consumption: 0.8µA typ. 4) Nch open drain output (BD48XXG/FVE series), CMOS output (BD49XXG/FVE series) 5) Small EMP5, SMP5C2 p |
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ETC |
LCD MODULE GRAPHIC 240 X 128 DOTS |
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ETCTI |
Flash Memory Module (Rev. A) |
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ETC |
TFT LCD -Low Input Voltage: 3.3V(TYP) -Display Colors of TFT LCD: 65K/262K colors -RGB Interface: 8/9/16/18BIT 8080 MCU interface;3/4-wire serial interface;16/18BIT RGB General Information Items Display area(AA) Driver element Display colors Number of pixel |
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