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ETC |
AF Power Amplifier |
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ETC |
NPN Silicon Bipolar Transistor |
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ETC |
Low-frequency amplification shell rated bipolar transistors 0.7 4 4 V V V S S MHz ×îСֵ 400 700 9 100 50 10 50 ×î´óÖµ . µ¥Î» V V V A A A VCEO(SUS) V(BR)CBO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat)(1) IC=2A, VCE(sat)(2) IC=8A, VBE(sat) tf ts fT IC=2A, VCC=24V IC=5A, IB1=-IB2=1A VCC=24V IC=5A, IB1=-IB |
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ETC |
KSE13009L / MJE13009L aturation Voltage Cob Output Capacitance fT Current Gain Bandwidth Product tON Turn On Time tSTG Storage Time tF Fall Time * Pulse Test: Pulse Width£300ms, Duty Cycle£2% IC = 10mA, IB = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 5A VCE = 5V, IC = 8A I |
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ETC |
Power AMP |
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ETC |
Low-frequency amplification environment rated bipolar transistors (BR)CBO V(BR)EBO ICBO ICEO ·¢É伫¡ª»ù´Ïò©µçÁ÷ Ö±Á÷µçÔöÒæ ¼¯µç«¡ª ·¢Éä±¥ºÍѹ½ »ù¼«¡ª ·¢Éä±¥ºÍѹ½µ ϽµÊ±¼ä Öü´æʱ¼ä ÌØÕ÷ƵÂÊ IEBO hFE VCE(sat)(1) VCE(sat)(2) VBE(sat) tf ts fT VCC=24V IC=0.1A, IB1=-IB2=0.02A VCC=24V IC=0.1A, IB1=-IB2=0.02A VCE=10V, IC |
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ETC |
2 channels AF power amplifier *1 Po 1 Po 2 THD 1 *1 THD 2 fL,fH ri VNO ICCO VN IST ON V (V) +-44 +-44 +-44 +-44 Conditions *2 f Po THD (Hz) (W) (%) 20 to 20k 0.4 1k 10 20 to 20k 5.0 1k 1.0 1k 1.0 ez ww w. s Frequency Characteristics *1 Input Impedance Output Noise Voltage *3 |
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ETC |
(SXW1300x) Transistors |
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ETC |
Silicon NPN Transistor e Base-Emitter Saturation Voltage Current Gain-Bandwidth Product Output Capacitance Power Output Collector Efficiency V(BR)CBO IC = 100µA, IB = 0 V(BR)CER IC = 1mA, RBE = 150 Ohm V(BR)EBO IE = 100µA, IC = 0 ICBO VCB = 40V IE = 0 IEBO VEB = 4V, IC = |
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ETC |
Low-frequency amplification shell rated bipolar transistors ä Öü´æʱ¼ä ÌØÕ÷ƵÂÊ (Tc=25¡æ Ä¿ ) ·û ºÅ ²âÊÔÌõ¼þ IC=10mA, IB=0 IC=1mA, IE=0 IE=1mA, IC=0 VCB=450V, IE=0 VCE=400V, IB=0 VEB=7V, IC=0 VCE=10V, VCE=5V, IC=1A, IC=4A, IC=2A, IC=0.5A IC=2A IB=0.2A IB=1A IB=0.5A ×îСֵ 400 450 9 8 5 4 ×î´óÖµ 100 50 10 50 |
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Texas Instruments |
Filter-Free Class-D Stereo Amplifier •1 Supports Multiple Output Configurations – 2 × 50 W Into a 4-Ω BTL Load at 21 V (TPA3116D2) – 2 × 30 W Into a 8-Ω BTL Load at 24 V (TPA3118D2) – 2 × 15 W Into a 8-Ω BTL Load at 15 V (TPA3130D2) • Wide Voltage Range: 4.5 V to 26 V • Efficient Class- |
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ETC |
Silicon NPN Transistor |
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ETC |
1 Amperes Surface Mount Schottky Barrier Rectifiers Outline • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra hig |
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ETC |
NPN Silicon Bipolar Transistor |
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ETC |
CMOS voltage regulator |
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ETC |
MJE13003BR Power dissipation PCM : 1.25 NPN SILICON TRANSISTOR TO 126 W Tamb=25 1.BASE 2.COLLECTOR 3.EMITTER Collector current 1.5 A ICM : Collector-base voltage V(BR)CBO : 700 V 123 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage C |
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ETC |
NPN POWER TRANSISTER High breakdown voltage High current capability High switching speed High reliability Application Energy-saving light Electronic ballasts High frequency switching power supply High frequency power transform Commonly power amplifier circuit Descriptio |
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ETC |
DC Motors |
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ETC |
CMOS System Reset (1) Super low consumption current (2) High precision detection voltage (3) Hysteresis characteristic (4) Operating range (5) Wide operating temperature range (6) Detection voltage 0.25µA typ. (when VDD = Vs + 1V) ±2% 5% typ. 0.95 ~ 10V -30 ~ +85°C 2 |
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ETC |
Transistors |
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