EPSON Electronics SG6 fiche technique

No.	Partie #	Fabricant	Description
1	SG531	EPSON Electronics	SG615 rrent Output rise time C-MOS level TTL level C-MOS level Output fall time TTL level Oscillation start up time Aging Shock resistance Note: TTL load: 2.4 V→0.4 V Time at 4.5 V to be 0 s Ta= +25 °C, VDD = 5 V, first year 4 ms Max. 10 ms Max. ±5 x 10
2	SG615PC	EPSON Electronics	SOJ High Frequency Crystal Oscillator sable current Output rise time C-MOS level TTL level C-MOS level Output fall time TTL level Oscillation start up time Aging Shock resistance Note: • Unless otherwise stated, characteristics (specifications) shown in the above table are based on the
3	SG51	EPSON Electronics	SG615
4	SG615PCN	EPSON Electronics	High Frequency Crystal Oscillator
5	SG615	EPSON Electronics	(SG-615/531/51) SOJ High Frequency Crystal Oscillator
6	SG615PH	EPSON Electronics	SOJ High Frequency Crystal Oscillator sable current Output rise time C-MOS level TTL level C-MOS level Output fall time TTL level Oscillation start up time Aging Shock resistance Note: • Unless otherwise stated, characteristics (specifications) shown in the above table are based on the
7	SG-615	EPSON Electronics	SG615
8	SG615	EPSON Electronics	SOJ High Frequency Crystal Oscillator e C-MOS level TTL level C-MOS level Output fall time TTL level Oscillation start up time Aging Shock resistance Note: TTL load: 2.4 V→0.4 V Time at 4.5 V to be 0 s Ta= +25 °C, VDD = 5 V, first year 4 ms Max. 10 ms Max. ±5 x 10-6/year Max. ±20 x 10
9	SG615P	EPSON Electronics	SOJ High Frequency Crystal Oscillator sable current Output rise time C-MOS level TTL level C-MOS level Output fall time TTL level Oscillation start up time Aging Shock resistance Note: • Unless otherwise stated, characteristics (specifications) shown in the above table are based on the
10	SG615PTJ	EPSON Electronics	SOJ High Frequency Crystal Oscillator sable current Output rise time C-MOS level TTL level C-MOS level Output fall time TTL level Oscillation start up time Aging Shock resistance Note: • Unless otherwise stated, characteristics (specifications) shown in the above table are based on the
11	SG615PTW	EPSON Electronics	SOJ High Frequency Crystal Oscillator sable current Output rise time C-MOS level TTL level C-MOS level Output fall time TTL level Oscillation start up time Aging Shock resistance Note: • Unless otherwise stated, characteristics (specifications) shown in the above table are based on the
12	SG615STW	EPSON Electronics	SOJ High Frequency Crystal Oscillator sable current Output rise time C-MOS level TTL level C-MOS level Output fall time TTL level Oscillation start up time Aging Shock resistance Note: • Unless otherwise stated, characteristics (specifications) shown in the above table are based on the
13	SG615PHW	EPSON Electronics	SOJ High Frequency Crystal Oscillator sable current Output rise time C-MOS level TTL level C-MOS level Output fall time TTL level Oscillation start up time Aging Shock resistance Note: • Unless otherwise stated, characteristics (specifications) shown in the above table are based on the
14	SG615SHW	EPSON Electronics	SOJ High Frequency Crystal Oscillator sable current Output rise time C-MOS level TTL level C-MOS level Output fall time TTL level Oscillation start up time Aging Shock resistance Note: • Unless otherwise stated, characteristics (specifications) shown in the above table are based on the
15	SG615PCW	EPSON Electronics	SOJ High Frequency Crystal Oscillator sable current Output rise time C-MOS level TTL level C-MOS level Output fall time TTL level Oscillation start up time Aging Shock resistance Note: • Unless otherwise stated, characteristics (specifications) shown in the above table are based on the
16	SG615SCW	EPSON Electronics	SOJ High Frequency Crystal Oscillator sable current Output rise time C-MOS level TTL level C-MOS level Output fall time TTL level Oscillation start up time Aging Shock resistance Note: • Unless otherwise stated, characteristics (specifications) shown in the above table are based on the