No. | Partie # | Fabricant | Description | Fiche Technique |
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EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS : * * * * * * * Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board SILICON BRIDGE RECTIFIERS WOB 0.39 (10.0) 0.31 (7.87) 0.2 |
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EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS : * * * * * * * Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board SILICON BRIDGE RECTIFIERS WOB 0.39 (10.0) 0.31 (7.87) 0.2 |
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EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS : * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board SILICON BRIDGE RECTIFIERS WOB 0.39 (10.0) 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) + |
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EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS : * * * * * * * Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board SILICON BRIDGE RECTIFIERS WOB 0.39 (10.0) 0.31 (7.87) 0.2 |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI |
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EIC discrete Semiconductors |
AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS : * * * * * * * Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS WOB 0.39 (10 |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI |
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EIC discrete Semiconductors |
AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS : * * * * * * * Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS WOB 0.39 (10 |
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EIC discrete Semiconductors |
AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS : * * * * * * * Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS WOB 0.39 (10 |
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EIC discrete Semiconductors |
AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS : * * * * * * * Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS WOB 0.39 (10 |
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EIC discrete Semiconductors |
AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS : * * * * * * * Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS WOB 0.39 (10 |
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EIC discrete Semiconductors |
BIDIRECTIONAL TRANSIENT SUPPRESSOR : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less www.DataSheet4U.com then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V * Pb / RoHS Free BIDIRECTIONAL |
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EIC discrete Semiconductors |
BIDIRECTIONAL TRANSIENT SUPPRESSOR : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less www.DataSheet4U.com then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V * Pb / RoHS Free BIDIRECTIONAL |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI |
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