| No. | Partie # | Fabricant | Description | Fiche Technique |
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EIC discrete Semiconductors |
SILICON ZENER DIODES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO- |
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EIC discrete Semiconductors |
SILICON ZENER DIODES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO- |
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EIC discrete Semiconductors |
SILICON ZENER DIODES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO- |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI |
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EIC discrete Semiconductors |
SILICON ZENER DIODES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO- |
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EIC discrete Semiconductors |
SILICON ZENER DIODES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO- |
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EIC discrete Semiconductors |
SILICON ZENER DIODES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO- |
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EIC discrete Semiconductors |
SILICON ZENER DIODES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO- |
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EIC discrete Semiconductors |
SILICON ZENER DIODES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO- |
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EIC discrete Semiconductors |
SILICON ZENER DIODES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO- |
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EIC discrete Semiconductors |
SILICON ZENER DIODES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO- |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO - 41 1.00 (25.4) MI |
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