EIC discrete Semiconductors 1N fiche technique

No.	Partie #	Fabricant	Description
1	1N4748	EIC discrete Semiconductors	SILICON ZENER DIODES : * Complete voltage range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO-
2	1N4460	EIC discrete Semiconductors	(1N4460 - 1N4496) SILICON ZENER DIODES : * Silicon power zener diodes * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free SILICON ZENER DIODES M1A 0.085(2.16) 0.075(1.91) 1.00 (25.4) MIN. 0.138(3.51)
3	1N6284	EIC discrete Semiconductors	TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33
4	1N6282	EIC discrete Semiconductors	TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33
5	1N4463	EIC discrete Semiconductors	(1N4460 - 1N4496) SILICON ZENER DIODES : * Silicon power zener diodes * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free SILICON ZENER DIODES M1A 0.085(2.16) 0.075(1.91) 1.00 (25.4) MIN. 0.138(3.51)
6	1N6294	EIC discrete Semiconductors	TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33
7	1N6297	EIC discrete Semiconductors	TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33
8	1N6294A	EIC discrete Semiconductors	TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33
9	1N4746	EIC discrete Semiconductors	SILICON ZENER DIODES : * Complete voltage range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO-
10	1N6284A	EIC discrete Semiconductors	TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33
11	1N6295A	EIC discrete Semiconductors	TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33
12	1N6281	EIC discrete Semiconductors	TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33
13	1N6283	EIC discrete Semiconductors	TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33
14	1N4761	EIC discrete Semiconductors	SILICON ZENER DIODES : * Complete voltage range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO-
15	1N4749	EIC discrete Semiconductors	SILICON ZENER DIODES : * Complete voltage range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO-
16	1N4484	EIC discrete Semiconductors	(1N4460 - 1N4496) SILICON ZENER DIODES : * Silicon power zener diodes * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free SILICON ZENER DIODES M1A 0.085(2.16) 0.075(1.91) 1.00 (25.4) MIN. 0.138(3.51)
17	1N5942A	EIC discrete Semiconductors	SILICON ZENER DIODES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO-
18	1N5956A	EIC discrete Semiconductors	SILICON ZENER DIODES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA * Case : DO-
19	1N6490	EIC discrete Semiconductors	(1N4460 - 1N4496) SILICON ZENER DIODES
20	1N6285A	EIC discrete Semiconductors	TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33