| No. | Partie # | Fabricant | Description | Fiche Technique |
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NXP |
PNP medium power transistors • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Telephony and general industrial applications • Thick and thin-film circuits. handbook, halfpage BSR30; BSR31; BSR33 PINNING PIN 1 2 3 emitter collector base DESCRIPTION DESCRIPTIO |
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EDI |
MINIATURE SILICON RECTIFIERS erated over 10,000v/inch in length, devices should be immersed in oil or re - encapsulated. EDI reserves the right to change these specifications at any time without notice. SR 300 FIG.1 OUTPUT CURRENT vs AMBIENT TEMPERATURE 100 100 SR 1500 1.0SEC |
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NXP |
PNP medium power transistors • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Telephony and general industrial applications • Thick and thin-film circuits. handbook, halfpage BSR30; BSR31; BSR33 PINNING PIN 1 2 3 emitter collector base DESCRIPTION DESCRIPTIO |
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NXP |
PNP medium power transistors • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Telephony and general industrial applications • Thick and thin-film circuits. handbook, halfpage BSR30; BSR31; BSR33 PINNING PIN 1 2 3 emitter collector base DESCRIPTION DESCRIPTIO |
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GME |
PNP Medium power transistors z High current.(max.1A). z Low voltage(max.80V). Pb Lead-free APPLICATIONS z Thlephony and general industrial applications. z Thick and thin-film circuits. Production specification BSR30/BSR31/BSR33 ORDERING INFORMATION Type No. Marking BSR30 |
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GME |
PNP Medium power transistors z High current.(max.1A). z Low voltage(max.80V). Pb Lead-free APPLICATIONS z Thlephony and general industrial applications. z Thick and thin-film circuits. Production specification BSR30/BSR31/BSR33 ORDERING INFORMATION Type No. Marking BSR30 |
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GME |
PNP Medium power transistors z High current.(max.1A). z Low voltage(max.80V). Pb Lead-free APPLICATIONS z Thlephony and general industrial applications. z Thick and thin-film circuits. Production specification BSR30/BSR31/BSR33 ORDERING INFORMATION Type No. Marking BSR30 |
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nexperia |
1A PNP medium power transistor and benefits • High current • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • AEC-Q101 qualified 3. Applications • Linear voltage regulators • High-side switches • Battery-driven devices • MOS |
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