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Dynex Semiconductor |
IGBT Power Module I I I I Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1700V 2.0V 100A 200A APPLICATIONS I I I Motor Drives Wind Turbines UPS Sys |
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Dynex Semiconductor |
Igbt Modules - Chopper I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V 200A 400A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS I |
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DYNEX |
IGBT Chopper Module 16 ±0.2 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Cu Base With Al2O3 Substrates Lead Free Construction KEY PARAMETERS 6 x O7 VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 28 ±0.5 1200V 2.2sVcrewing depth 810600m0AAa |
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Dynex |
Half Bridge IGBT Module s s s 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base Plate KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 200A 400A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS |
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Dynex |
Single Switch IGBT Module Preliminary Information s s s s 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 800A 1600A *(measured at the power busbars |
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Dynex Semiconductor |
Half-Bridge IGBT • 10µs Short Circuit Withstand • High Thermal Cycling Capability • Soft Punch Through Silicon • Isolated AlSiC Base with AlN Substrates • Lead Free Construction KEY PARAMETERS VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 3300V 2.8V 100A 200A * |
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Dynex Semiconductor |
Single Switch IGBT Module • • • • • 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction Isolated MMC Base with AlN Substrates High Thermal Cycling Capability DIM600XSM45-F000 Single Switch IGBT Module DS5874-1.0 October 2005 (LN24333) KEY PARAMETE |
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Dynex Semiconductor |
Single Switch IGBT Module • • • • • 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction Isolated MMC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 4500V 2.9 V 600A 1200A *(m |
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Dynex Semiconductor |
Dual Switch IGBT Module • • • • 10µs Short Circuit Withstand Non Punch Through Silicon Isolated AlSiC Baseplate with AlN Substrates KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) * 1700V 2.7V 600A 1200A High Thermal Cycling Capability (measured at the power |
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Dynex Semiconductor |
Single Switch IGBT Module I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V 600A 1200A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS |
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Dynex Semiconductor |
Bi-directional Switch Igbt Module s s s 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VDRM (typ) VT (max) IC (max) IC(PK) ±1200V 4.3V 200A 400A APPLICATIONS s s s Matrix Converters Brushless Motor Controllers Frequency Converters |
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Dynex Semiconductor |
Igbt Modules - Half Bridge I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V 200A 400A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS I |
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Dynex Semiconductor |
Igbt Modules - Chopper I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V 200A 400A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS I |
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Dynex Semiconductor |
Half Bridge Igbt Module I I I I KEY PARAMETERS VCES VCE(sat) * IC IC(PK) (typ) (max) (max) 3300V 3.4V 200A 400A 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates *(measured at the power busbars an |
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Dynex Semiconductor |
Igbt Modules - Half Bridge I I I I KEY PARAMETERS VCES VCE(sat) * IC IC(PK) (typ) (max) (max) 3300V 3.0V 200A 400A Soft Punch Through Silicon 10µs Short Circuit Withstand Isolated MMC Base with AlN Substrates High Thermal Cycling Capability * Measured at auxiliary terminals |
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Dynex Semiconductor |
IGBT Chopper Module • • • 10µs Short Circuit Withstand Soft Punch Through Silicon Isolated AlSiC Base with AlN substrates High thermal cycling capability KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) * 3300V 2.8V 200A 400A • (measured at the power busba |
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Dynex Semiconductor |
IGBT Chopper Module • • • 10µs Short Circuit Withstand Soft Punch Through Silicon Isolated AlSiC Base with AlN substrates High thermal cycling capability KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) * 3300V 2.8V 200A 400A • (measured at the power busba |
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Dynex Semiconductor |
IGBT Chopper Module Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates High Thermal Cycling Capability 10µs Short Circuit Withstand Lead Free construction KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) *(measured at the auxiliary terminal |
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DYNEX |
Half Bridge IGBT • Trench Gate IGBT • High Thermal Cycling • Cu Base with Enhanced Al2O3 Substrates • 10µs Short Circuit Withstand KEY PARAMETERS VCES VCE(sat) * (typ) IC (max) IC(RM) (max) 1700V 1.80V 600A 1200A * Measured at the auxiliary terminals APPLICA |
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DYNEX |
IGBT • 10µs Short Circuit Withstand • High Thermal Cycling Capability • Non Punch Through Silicon • Isolated AlSiC Base With AlN Substrates • Lead Free Construction KEY PARAMETERS VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 1700V 2.7V 600A 1200A * |
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