| No. | Partie # | Fabricant | Description | Fiche Technique |
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DnI |
N-Channel MOSFET High ruggedness RDS(on) (Max 11.5 )@VGS=10V 1. Gate { { { N-Channel MOSFET 2. Drain BVDSS = 600V RDS(ON) = 11.5 ohm ID = 1.1A 3. Source Gate Charge (Typical 7nC) Improved dv/dt Capability 100% Avalanche Tested General Description This N-channel e |
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