| No. | Partie # | Fabricant | Description | Fiche Technique |
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Diotec Semiconductor |
Surface Mount Si-Schottky Barrier Diodes ard surge current, 10 :s squarewave Stoßstrom für einen 10 :s Rechteckimpuls Leakage current, Tj = 25/C Sperrstrom Junction capacitance Sperrschichtkapazität Reverse recovery time Sperrverzug LL101C LL101B LL101A VR = 0 V IF = 5 mA through/über IR = |
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Diotec Semiconductor |
Surface Mount Si-Schottky Barrier Diodes ard surge current, 10 :s squarewave Stoßstrom für einen 10 :s Rechteckimpuls Leakage current, Tj = 25/C Sperrstrom Junction capacitance Sperrschichtkapazität Reverse recovery time Sperrverzug LL101C LL101B LL101A VR = 0 V IF = 5 mA through/über IR = |
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Diotec Semiconductor |
Surface Mount Si-Schottky Barrier Diodes ard surge current, 10 :s squarewave Stoßstrom für einen 10 :s Rechteckimpuls Leakage current, Tj = 25/C Sperrstrom Junction capacitance Sperrschichtkapazität Reverse recovery time Sperrverzug LL101C LL101B LL101A VR = 0 V IF = 5 mA through/über IR = |
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Diotec Semiconductor |
Surface Mount Si-Schottky Barrier Diodes ard surge current, 10 :s squarewave Stoßstrom für einen 10 :s Rechteckimpuls Leakage current, Tj = 25/C Sperrstrom Junction capacitance Sperrschichtkapazität Reverse recovery time Sperrverzug LL101C LL101B LL101A VR = 0 V IF = 5 mA through/über IR = |
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Diotec Semiconductor |
Surface Mount Si-Schottky Barrier Diodes j = 25/C VR = 0 V TA = 25 /C TA = 25/C VR = VRRM f = 1 MHz Ptot IFSM IR Ctot trr Tj TS RthA 400 mW1) 15 A < 5 :A typ. 50 pF typ. 10 ns +125/C - 55...+175/C < 300 K/W 1) IF = 200 mA through/über IR = 200 A to/auf IR = 20 mA Junction temperature – |
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Diotec Semiconductor |
Surface Mount Si-Schottky Barrier Diodes j = 25/C VR = 0 V TA = 25 /C TA = 25/C VR = VRRM f = 1 MHz Ptot IFSM IR Ctot trr Tj TS RthA 400 mW1) 15 A < 5 :A typ. 50 pF typ. 10 ns +125/C - 55...+175/C < 300 K/W 1) IF = 200 mA through/über IR = 200 A to/auf IR = 20 mA Junction temperature – |
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Diotec Semiconductor |
Surface Mount Si-Schottky Barrier Diodes j = 25/C VR = 0 V TA = 25 /C TA = 25/C VR = VRRM f = 1 MHz Ptot IFSM IR Ctot trr Tj TS RthA 400 mW1) 15 A < 5 :A typ. 50 pF typ. 10 ns +125/C - 55...+175/C < 300 K/W 1) IF = 200 mA through/über IR = 200 A to/auf IR = 20 mA Junction temperature – |
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