Diotec Semiconductor DBI fiche technique

No.	Partie #	Fabricant	Description
1	DBI6-08	Diotec Semiconductor	Three-Phase Si-Bridge Rectifiers 0 400 600 800 1000 1200 1400 1600 Repetitive peak fwd. current – Period. Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing, t <10 ms Grenzlastintegral, t <10 ms 1 2 f > 15 Hz TA
2	DBI15-16	Diotec Semiconductor	Three-Phase Si-Bridge Rectifiers Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t <10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 2 f > 15 Hz TA = 25/C TA = 25/C IFRM IFSM i2t Tj TS ) Val
3	DBI6-005	Diotec Semiconductor	Three-Phase Si-Bridge Rectifiers 0 400 600 800 1000 1200 1400 1600 Repetitive peak fwd. current – Period. Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing, t <10 ms Grenzlastintegral, t <10 ms 1 2 f > 15 Hz TA
4	DBI6-04	Diotec Semiconductor	Three-Phase Si-Bridge Rectifiers 0 400 600 800 1000 1200 1400 1600 Repetitive peak fwd. current – Period. Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing, t <10 ms Grenzlastintegral, t <10 ms 1 2 f > 15 Hz TA
5	DBI6-06	Diotec Semiconductor	Three-Phase Si-Bridge Rectifiers 0 400 600 800 1000 1200 1400 1600 Repetitive peak fwd. current – Period. Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing, t <10 ms Grenzlastintegral, t <10 ms 1 2 f > 15 Hz TA
6	DBI6-10	Diotec Semiconductor	Three-Phase Si-Bridge Rectifiers 0 400 600 800 1000 1200 1400 1600 Repetitive peak fwd. current – Period. Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing, t <10 ms Grenzlastintegral, t <10 ms 1 2 f > 15 Hz TA
7	DBI6-12	Diotec Semiconductor	Three-Phase Si-Bridge Rectifiers 0 400 600 800 1000 1200 1400 1600 Repetitive peak fwd. current – Period. Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing, t <10 ms Grenzlastintegral, t <10 ms 1 2 f > 15 Hz TA
8	DBI6-16	Diotec Semiconductor	Three-Phase Si-Bridge Rectifiers 0 400 600 800 1000 1200 1400 1600 Repetitive peak fwd. current – Period. Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing, t <10 ms Grenzlastintegral, t <10 ms 1 2 f > 15 Hz TA
9	DBI15-04	Diotec Semiconductor	Three-Phase Si-Bridge Rectifiers Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t <10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 2 f > 15 Hz TA = 25/C TA = 25/C IFRM IFSM i2t Tj TS ) Val
10	DBI15-08	Diotec Semiconductor	Three-Phase Si-Bridge Rectifiers Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t <10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 2 f > 15 Hz TA = 25/C TA = 25/C IFRM IFSM i2t Tj TS ) Val
11	DBI15-10	Diotec Semiconductor	Three-Phase Si-Bridge Rectifiers Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t <10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 2 f > 15 Hz TA = 25/C TA = 25/C IFRM IFSM i2t Tj TS ) Val
12	DBI15-12	Diotec Semiconductor	Three-Phase Si-Bridge Rectifiers Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t <10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 2 f > 15 Hz TA = 25/C TA = 25/C IFRM IFSM i2t Tj TS ) Val
13	DBI15-14	Diotec Semiconductor	Three-Phase Si-Bridge Rectifiers Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t <10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 2 f > 15 Hz TA = 25/C TA = 25/C IFRM IFSM i2t Tj TS ) Val
14	DBI15005	Diotec Semiconductor	Three-Phase Si-Bridge Rectifiers Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t <10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 2 f > 15 Hz TA = 25/C TA = 25/C IFRM IFSM i2t Tj TS ) Val
15	DBI25-005	Diotec Semiconductor	Three-Phase Si-Bridge Rectifiers Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t <10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 2 f > 15 Hz TA = 25/C TA = 25/C IFRM IFSM i2t Tj TS ) Val
16	DBI25-12	Diotec Semiconductor	Three-Phase Si-Bridge Rectifiers Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t <10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 2 f > 15 Hz TA = 25/C TA = 25/C IFRM IFSM i2t Tj TS ) Val
17	DBI25-14	Diotec Semiconductor	Three-Phase Si-Bridge Rectifiers Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t <10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 2 f > 15 Hz TA = 25/C TA = 25/C IFRM IFSM i2t Tj TS ) Val
18	DBI6-14	Diotec Semiconductor	Three-Phase Si-Bridge Rectifiers 0 400 600 800 1000 1200 1400 1600 Repetitive peak fwd. current – Period. Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing, t <10 ms Grenzlastintegral, t <10 ms 1 2 f > 15 Hz TA
19	DBI15-005	Diotec Semiconductor	Three-Phase Si-Bridge Rectifiers Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t <10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 2 f > 15 Hz TA = 25/C TA = 25/C IFRM IFSM i2t Tj TS ) Val
20	DBI15-01	Diotec Semiconductor	Three-Phase Si-Bridge Rectifiers Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t <10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 2 f > 15 Hz TA = 25/C TA = 25/C IFRM IFSM i2t Tj TS ) Val