| No. | Partie # | Fabricant | Description | Fiche Technique |
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Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors /C) BCF 29, BCF 30 32 V 32 V 5V 250 mW 1) 100 mA 200 mA 100 mA 150/C - 65…+ 150/C Kennwerte (Tj = 25/C) Min. Typ. – – – 80 mV 150 mV Max. 100 nA 10 :A 100 nA 300 mV – Characteristics (Tj = 25/C) Collector-Base cutoff current – Kollektorreststrom IE |
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Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors /C) BCF 29, BCF 30 32 V 32 V 5V 250 mW 1) 100 mA 200 mA 100 mA 150/C - 65…+ 150/C Kennwerte (Tj = 25/C) Min. Typ. – – – 80 mV 150 mV Max. 100 nA 10 :A 100 nA 300 mV – Characteristics (Tj = 25/C) Collector-Base cutoff current – Kollektorreststrom IE |
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Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors |
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Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors |
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Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors 5V 250 mW 1) 100 mA 200 mA 100 mA 150/C - 65…+ 150/C Characteristics (Tj = 25/C) Min. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 20 V IE = 0, VCB = 20 V, Tj = 100/C Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = |
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