Diotec Semiconductor BC8 fiche technique

No.	Partie #	Fabricant	Description
1	BC847B	Diotec Semiconductor	SMD General Purpose NPN Transistors General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar D
2	BC848C	Diotec Semiconductor	SMD General Purpose NPN Transistors General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar D
3	BC848B	Diotec Semiconductor	SMD General Purpose NPN Transistors General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar D
4	BC846B	Diotec Semiconductor	SMD General Purpose NPN Transistors General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar D
5	BC846A	Diotec Semiconductor	SMD General Purpose NPN Transistors General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar D
6	BC858B	Diotec Semiconductor	SMD General Purpose PNP Transistors - VCEO - VCBO - VEBO Ptot - IC - ICM Tj TS Grenzwerte (TA = 25°C) BC856 BC857 BC860 BC858 BC859 65 V 45 V 30 V 80 V 50 V 30 V 5V 250 mW 1) 100 mA 200 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) DC current gain – Kollektor-
7	BC849C	Diotec Semiconductor	SMD General Purpose NPN Transistors General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar D
8	BC808	Diotec Semiconductor	Surface mount Si-Epitaxial PlanarTransistors schichttemperatur Storage temperature – Lagerungstemperatur E-B short B open C open - VCES - VCEO - VEBO Ptot - IC - ICM IEM - IBM Tj TS Grenzwerte (TA = 25°C) BC807 BC808 50 V 30 V 45 V 25 V 5V 310 mW 1) 800 mA 1A 1A 200 mA -55...+15
9	BC857	Diotec Semiconductor	SMD General Purpose PNP Transistors - VCEO - VCBO - VEBO Ptot - IC - ICM Tj TS Grenzwerte (TA = 25°C) BC856 BC857 BC860 BC858 BC859 65 V 45 V 30 V 80 V 50 V 30 V 5V 250 mW 1) 100 mA 200 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) DC current gain – Kollektor-
10	BC850B	Diotec Semiconductor	SMD General Purpose NPN Transistors General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar D
11	BC850A	Diotec Semiconductor	SMD General Purpose NPN Transistors General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar D
12	BC858BW	Diotec Semiconductor	Surface mount Si-Epitaxial PlanarTransistors
13	BC858C	Diotec Semiconductor	SMD General Purpose PNP Transistors - VCEO - VCBO - VEBO Ptot - IC - ICM Tj TS Grenzwerte (TA = 25°C) BC856 BC857 BC860 BC858 BC859 65 V 45 V 30 V 80 V 50 V 30 V 5V 250 mW 1) 100 mA 200 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) DC current gain – Kollektor-
14	BC808W	Diotec Semiconductor	Surface mount Si-Epitaxial PlanarTransistors ot - IC - ICM - IBM IEM Tj TS 2.1±0.1 Grenzwerte (TA = 25/C) BC 807W 45 V 50 V 50 V 5V 225 mW 1) 500 mA 1000 mA 200 mA 1000 mA 150/C - 65…+ 150/C BC 808W 25 V 30 V 30 V Characteristics, Tj = 25/C Min. DC current gain – Kollektor-Basis-Stromverhält
15	BC849	Diotec Semiconductor	Surface mount Si-Epitaxial PlanarTransistors General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar D
16	BC856	Diotec Semiconductor	SMD General Purpose PNP Transistors - VCEO - VCBO - VEBO Ptot - IC - ICM Tj TS Grenzwerte (TA = 25°C) BC856 BC857 BC860 BC858 BC859 65 V 45 V 30 V 80 V 50 V 30 V 5V 250 mW 1) 100 mA 200 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) DC current gain – Kollektor-
17	BC856A	Diotec Semiconductor	SMD General Purpose PNP Transistors - VCEO - VCBO - VEBO Ptot - IC - ICM Tj TS Grenzwerte (TA = 25°C) BC856 BC857 BC860 BC858 BC859 65 V 45 V 30 V 80 V 50 V 30 V 5V 250 mW 1) 100 mA 200 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) DC current gain – Kollektor-
18	BC848A	Diotec Semiconductor	SMD General Purpose NPN Transistors General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar D
19	BC856B	Diotec Semiconductor	SMD General Purpose PNP Transistors - VCEO - VCBO - VEBO Ptot - IC - ICM Tj TS Grenzwerte (TA = 25°C) BC856 BC857 BC860 BC858 BC859 65 V 45 V 30 V 80 V 50 V 30 V 5V 250 mW 1) 100 mA 200 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) DC current gain – Kollektor-
20	BC856W	Diotec Semiconductor	Surface mount Si-Epitaxial PlanarTransistors