Diotec Semiconductor 1N5 fiche technique

No.	Partie #	Fabricant	Description
1	1N5397	Diotec Semiconductor	Silicon Rectifiers titive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms 1 IFAV IFAV IFRM IFSM i2t ) Valid, if leads are kept at
2	1N5394	Diotec Semiconductor	Silicon Rectifiers titive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms 1 IFAV IFAV IFRM IFSM i2t ) Valid, if leads are kept at
3	1N5060	Diotec Semiconductor	Silicon Rectifiers s Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 25/C f > 15 Hz TA = 25/C TA = 25/C IFAV IFRM IFSM i2t Tj TS 2 A 1) 10 A 1) 50 A 12.5 A2s – 50…+150/C – 50…+175/C 1 ) Valid, if leads are kep
4	1N5061	Diotec Semiconductor	Silicon Rectifiers s Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 25/C f > 15 Hz TA = 25/C TA = 25/C IFAV IFRM IFSM i2t Tj TS 2 A 1) 10 A 1) 50 A 12.5 A2s – 50…+150/C – 50…+175/C 1 ) Valid, if leads are kep
5	1N5820	Diotec Semiconductor	Schottky Barrier Rectifiers surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 50/C f > 15
6	1N5821	Diotec Semiconductor	Schottky Barrier Rectifiers surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 50/C f > 15
7	1N5346B	Diotec Semiconductor	Silicon-Power-Z-Diodes (non-planar technology) – Lagerungstemperatur Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Thermal resistance junction to lead Wärmewiderstand Sperrschicht – Anschlußdraht Zener voltages see table on next page Zener-Spannungen sie
8	1N5348B	Diotec Semiconductor	Silicon-Power-Z-Diodes (non-planar technology) – Lagerungstemperatur Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Thermal resistance junction to lead Wärmewiderstand Sperrschicht – Anschlußdraht Zener voltages see table on next page Zener-Spannungen sie
9	1N5398	Diotec Semiconductor	Silicon Rectifiers titive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms 1 IFAV IFAV IFRM IFSM i2t ) Valid, if leads are kept at
10	1N5400K	Diotec Semiconductor	Silicon Rectifiers zenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms TA = 50/C f > 15 Hz TA = 25/C TA = 25/C IFAV IFRM IFSM i2t 3 A 1) 20 A 1) 100 A 50 A2s 1 ) Valid,
11	1N5403K	Diotec Semiconductor	Silicon Rectifiers zenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms TA = 50/C f > 15 Hz TA = 25/C TA = 25/C IFAV IFRM IFSM i2t 3 A 1) 20 A 1) 100 A 50 A2s 1 ) Valid,
12	1N5059	Diotec Semiconductor	Silicon Rectifiers s Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 25/C f > 15 Hz TA = 25/C TA = 25/C IFAV IFRM IFSM i2t Tj TS 2 A 1) 10 A 1) 50 A 12.5 A2s – 50…+150/C – 50…+175/C 1 ) Valid, if leads are kep
13	1N5062	Diotec Semiconductor	Silicon Rectifiers s Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 25/C f > 15 Hz TA = 25/C TA = 25/C IFAV IFRM IFSM i2t Tj TS 2 A 1) 10 A 1) 50 A 12.5 A2s – 50…+150/C – 50…+175/C 1 ) Valid, if leads are kep
14	1N5822	Diotec Semiconductor	Schottky Barrier Rectifiers surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 50/C f > 15
15	1N5345B	Diotec Semiconductor	Silicon-Power-Z-Diodes (non-planar technology) – Lagerungstemperatur Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Thermal resistance junction to lead Wärmewiderstand Sperrschicht – Anschlußdraht Zener voltages see table on next page Zener-Spannungen sie
16	1N5347B	Diotec Semiconductor	Silicon-Power-Z-Diodes (non-planar technology) – Lagerungstemperatur Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Thermal resistance junction to lead Wärmewiderstand Sperrschicht – Anschlußdraht Zener voltages see table on next page Zener-Spannungen sie
17	1N5349B	Diotec Semiconductor	Silicon-Power-Z-Diodes (non-planar technology) – Lagerungstemperatur Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Thermal resistance junction to lead Wärmewiderstand Sperrschicht – Anschlußdraht Zener voltages see table on next page Zener-Spannungen sie
18	1N5391	Diotec Semiconductor	Silicon Rectifiers titive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms 1 IFAV IFAV IFRM IFSM i2t ) Valid, if leads are kept at
19	1N5392	Diotec Semiconductor	Silicon Rectifiers titive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms 1 IFAV IFAV IFRM IFSM i2t ) Valid, if leads are kept at
20	1N5393	Diotec Semiconductor	Silicon Rectifiers titive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms 1 IFAV IFAV IFRM IFSM i2t ) Valid, if leads are kept at