Diotec Semiconductor 1N4 fiche technique

No.	Partie #	Fabricant	Description
1	1N4937	Diotec Semiconductor	Fast Silicon Rectifiers Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 75/C f > 15 Hz TA = 25/C TA = 25/C IFAV IFRM IFSM i2t Tj TS 1 A 1) 10 A 1) 30 A 4.5 A2s – 50…+150/C – 50…+175/C 1
2	1N4150	Diotec Semiconductor	Silicon Planar Diodes /C 1N 4151 200 mA2) 500 mA2) 2000 mA Operating junction temp. – Sperrschichttemp. Storage temperature – Lagerungstemperatur 1 2 34 ) Tested with 100 :A pulses – Gemessen mit 100 :A-Impulsen ) Valid, if leads are kept at TA = 25/C at a distance o
3	1N4933	Diotec Semiconductor	Fast Silicon Rectifiers Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 75/C f > 15 Hz TA = 25/C TA = 25/C IFAV IFRM IFSM i2t Tj TS 1 A 1) 10 A 1) 30 A 4.5 A2s – 50…+150/C – 50…+175/C 1
4	1N4934	Diotec Semiconductor	Fast Silicon Rectifiers Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 75/C f > 15 Hz TA = 25/C TA = 25/C IFAV IFRM IFSM i2t Tj TS 1 A 1) 10 A 1) 30 A 4.5 A2s – 50…+150/C – 50…+175/C 1
5	1N4935	Diotec Semiconductor	Fast Silicon Rectifiers Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 75/C f > 15 Hz TA = 25/C TA = 25/C IFAV IFRM IFSM i2t Tj TS 1 A 1) 10 A 1) 30 A 4.5 A2s – 50…+150/C – 50…+175/C 1
6	1N4936	Diotec Semiconductor	Fast Silicon Rectifiers Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 75/C f > 15 Hz TA = 25/C TA = 25/C IFAV IFRM IFSM i2t Tj TS 1 A 1) 10 A 1) 30 A 4.5 A2s – 50…+150/C – 50…+175/C 1
7	1N4007-1300	Diotec Semiconductor	Silicon Rectifiers mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle 1 TA = 75/C TA = 100/C f > 15 Hz TA = 25/C IFAV IFAV IFRM IFSM 1 A 1) 0.75 A 1) 10 A 1)