| No. | Partie # | Fabricant | Description | Fiche Technique |
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Diotec |
SMD Transient Voltage Suppressor Diodes Besonderheiten Uni- and Bidirectional versions Uni- und Bidirektionale Versionen Peak pulse power of 600 W 600 W Impuls-Verlustleistung (10/1000 µs waveform) (10/1000 µs Strom-Impuls) Very fast response time Sehr schnelle Ansprechzeit Furth |
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Diotec |
SMD Transient Voltage Suppressor Diodes Besonderheiten Uni- and Bidirectional versions Uni- und Bidirektionale Versionen Peak pulse power of 600 W 600 W Impuls-Verlustleistung (10/1000 µs waveform) (10/1000 µs Strom-Impuls) Very fast response time Sehr schnelle Ansprechzeit Furth |
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Diotec |
Silicon Rectifier Diodes |
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Diotec |
SMD Transient Voltage Suppressor Diodes Uni- and Bidirectional versions Peak pulse power of 5000 W (10/1000 µs waveform) Very fast response time Compliant to RoHS, REACH, Conflict Minerals 1) WEEE Besonderheiten Uni- und Bidirektionale Versionen 5000 W Impuls-Verlustleistung (10/1000 |
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Diotec |
SMD Transient Voltage Suppressor Diodes Uni- and Bidirectional versions Peak pulse power of 3000 W (10/1000 µs waveform) Very fast response time Compliant to RoHS, REACH, Conflict Minerals 1) WEEE Besonderheiten Uni- und Bidirektionale Versionen 3000 W Impuls-Verlustleistung (10/1000 |
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Diotec |
SMD Transient Voltage Suppressor Diodes Uni- and Bidirectional versions Peak pulse power of 3000 W (10/1000 µs waveform) Very fast response time Compliant to RoHS, REACH, Conflict Minerals 1) WEEE Besonderheiten Uni- und Bidirektionale Versionen 3000 W Impuls-Verlustleistung (10/1000 |
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Diotec |
Dual Surface Mount Silicon Planar Zener Diodes ngs Power dissipation Verlustleistung Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft TA = 25/C Grenz- und Ken |
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Diotec |
Transient Voltage Suppressor Diodes Uni- and Bidirectional versions Peak pulse power of 400 W (10/1000 µs waveform) Very fast response time Compliant to RoHS, REACH, Conflict Minerals 1) Ø 0.8±0.05 Mechanical Data 1) Taped in ammo pack Weight approx. Case material Dimensions - Maß |
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Diotec |
Silicon Rectifier Diodes |
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Diotec |
Silicon Rectifier Diodes |
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Diotec |
SMD Transient Voltage Suppresssor Diodes Uni- and Bidirectional versions Peak pulse power of 1500 W (10/1000 µs waveform) Very fast response time Further available: 1.5SMC220...550CA having VBR = 220 ... 550 V Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reele |
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Diotec |
Transient Voltage Suppressor Diodes Uni- and Bidirectional versions Peak pulse power of 5000 W (10/1000 µs waveform) Very fast response time Package smaller than industry standard Compliant to RoHS, REACH, Conflict Minerals 1) WEEE Besonderheiten Uni- und Bidirektionale Versionen 5 |
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Diotec |
SMD Transient Voltage Suppresssor Diodes Uni- and Bidirectional versions Peak pulse power of 1500 W (10/1000 µs waveform) Very fast response time Further available: 1.5SMC220...550CA having VBR = 220 ... 550 V Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reele |
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Diotec |
Silicon Rectifier Diodes |
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Diotec |
SMD Transient Voltage Suppressor Diodes Uni- and Bidirectional versions Peak pulse power of 200 W (10/1000 µs waveform) Very fast response time Low profile package Compliant to RoHS, REACH, Conflict Minerals 1) WEEE Typische Anwendungen Schutz gegen Überspannung ESD-Schutz Freilauf-Diode |
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Diotec |
Transient Voltage Suppressor Diodes Uni- and Bidirectional versions Peak pulse power of 400 W (10/1000 µs waveform) Very fast response time Compliant to RoHS, REACH, Conflict Minerals 1) Ø 0.8±0.05 Mechanical Data 1) Taped in ammo pack Weight approx. Case material Dimensions - Maß |
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Diotec |
Silicon Rectifier Diodes |
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Diotec Semiconductor |
Silicon-Bridge Rectifiers ard surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Peak forward surge current, 60 Hz half sine-wave Stoßstrom für eine 60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Operating junction te |
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Diotec Semiconductor |
Rectifier Arrays itigem Betrieb Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle IFAV IFAV IFAV IFAV IFSM 600 mA 1) 150 mA 1) 600 mA 1) 150 mA 1) 30 A TU = 25/C TA = 25/C 1 ) Leads kept at ambient temperature at a distan |
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Diotec |
Silicon Rectifier Diodes |
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