No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
|
|
Diotec |
Si-Epitaxial Transistors PN2222A / 2N2222A 75 V 40 V 6V 625 mW 1) 600 mA 800 mA -65...+150°C -65…+150°C Characteristics (Tj = 25°C) Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 60 V Collector saturation voltage – Kollektor-Sättigungsspannung IC = 150 mA, |
|
|
|
Diotec Semiconductor |
Silicon Rectifier Cells with polysiloxan passivation or fusing – Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Forward voltage Durchlaßspannung Leakage current – Sperrstrom Tj = 25/C Tj = 25/C IFAV IFRM IFSM i2t Tj TS IF |
|
|
|
Diotec |
General Purpose NPN Transistors General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) WEEE Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar Drei Stromve |
|
|
|
Diotec |
SMD Transient Voltage Suppressor Diodes Besonderheiten Uni- and Bidirectional versions Uni- und Bidirektionale Versionen Peak pulse power of 600 W 600 W Impuls-Verlustleistung (10/1000 µs waveform) (10/1000 µs Strom-Impuls) Very fast response time Sehr schnelle Ansprechzeit Furth |
|
|
|
Diotec |
SMD Zener Diodes High power dissipation VZ up to 100 V Compliant to RoHS, REACH, Conflict Minerals 1) WEEE RoHS Pb Besonderheiten Hohe Leistungsfähigkeit VZ bis zu 100 V Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanical Data 1) Mechanische Daten 1) Taped |
|
|
|
Diotec |
High voltage Si-epitaxial planar transistors 55…+150°C MPSA94 400 V 400 V Characteristics (Tj = 25°C) Min. Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 200 V IE = 0, - VCB = 160 V Emitter-Base cutoff current – Emitterreststrom IB = 0, - VEB = 3 V Collector saturation volt |
|
|
|
Diotec Semiconductor |
Single Phase Bridge Rectifier e Periodische Spitzensperrspannung VRRM [V] 1) 50 100 200 400 600 800 1000 Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Peak forward surge current, 60 Hz half sine-wave Stoßstrom für eine 60 Hz Sinus-Halb |
|
|
|
Diotec |
General Purpose NPN Transistors General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) WEEE Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar Drei Stromve |
|
|
|
Diotec Semiconductor |
Silicon-Bridge Rectifiers ard surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Peak forward surge current, 60 Hz half sine-wave Stoßstrom für eine 60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Operating junction te |
|
|
|
Diotec |
SMD Transient Voltage Suppressor Diodes Uni- and Bidirectional versions Peak pulse power of 3000 W (10/1000 µs waveform) Very fast response time Compliant to RoHS, REACH, Conflict Minerals 1) WEEE Besonderheiten Uni- und Bidirektionale Versionen 3000 W Impuls-Verlustleistung (10/1000 |
|
|
|
Diotec Semiconductor |
SMD General Purpose NPN Transistors General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar D |
|
|
|
Diotec Semiconductor |
Surface Mount Schottky-Bridge Rectifiers titive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttem |
|
|
|
Diotec |
SMD Transient Voltage Suppressor Diodes Besonderheiten Uni- and Bidirectional versions Uni- und Bidirektionale Versionen Peak pulse power of 600 W 600 W Impuls-Verlustleistung (10/1000 µs waveform) (10/1000 µs Strom-Impuls) Very fast response time Sehr schnelle Ansprechzeit Furth |
|
|
|
Diotec Semiconductor |
Silicon Press-Fit-Diodes High-temperature diodes in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 / 60 Hz half sine-wave Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t <10 ms Operating junc |
|
|
|
Diotec Semiconductor |
Silicon Rectifiers ion temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TA = 50/C f > 15 Hz TA = 25/C TA = 25/C IFAV IFRM IFSM i2t Tj TS 1 A 1) 10 A 1) 50 A 12.5 A2s – 50…+175/C – 50…+175/C 1 ) Valid, if leads are kept at ambient temp |
|
|
|
Diotec |
Fast Silicon Rectifiers e 50 Hz Sinus-Halbwelle TA = 50°C IFAV 2 A 1) f > 15 Hz IFRM i2t 20 A 1) TA = 25°C 8 A2s TA = 25°C IFSM 40 A Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS – 50…+150°C – 50…+175°C |
|
|
|
Diotec |
SMD Transient Voltage Suppressor Diodes Besonderheiten Uni- and Bidirectional versions Uni- und Bidirektionale Versionen Peak pulse power of 600 W 600 W Impuls-Verlustleistung (10/1000 µs waveform) (10/1000 µs Strom-Impuls) Very fast response time Sehr schnelle Ansprechzeit Furth |
|
|
|
Diotec |
SMD Transient Voltage Suppressor Diodes Uni- and Bidirectional versions Peak pulse power of 5000 W (10/1000 µs waveform) Very fast response time Compliant to RoHS, REACH, Conflict Minerals 1) WEEE Besonderheiten Uni- und Bidirektionale Versionen 5000 W Impuls-Verlustleistung (10/1000 |
|
|
|
Diotec |
SMD Transient Voltage Suppressor Diodes Besonderheiten Uni- and Bidirectional versions Uni- und Bidirektionale Versionen Peak pulse power of 600 W 600 W Impuls-Verlustleistung (10/1000 µs waveform) (10/1000 µs Strom-Impuls) Very fast response time Sehr schnelle Ansprechzeit Furth |
|
|
|
Diotec |
SMD Transient Voltage Suppressor Diodes Besonderheiten Uni- and Bidirectional versions Uni- und Bidirektionale Versionen Peak pulse power of 600 W 600 W Impuls-Verlustleistung (10/1000 µs waveform) (10/1000 µs Strom-Impuls) Very fast response time Sehr schnelle Ansprechzeit Furth |
|