Diodes ZXG fiche technique

No.	Partie #	Fabricant	Description
1	ZXGD3103	Diodes Incorporated	SYNCHRONOUS MOSFET CONTROLLER The ZXGD3103 is intended to drive MOSFETS configured as ideal diode replacements. The device is comprised of a differential amplifier detector stage and high current driver. The detector monitors the reverse voltage of the MOSFET such that if body d
2	ZXGD3104	Diodes	SYNCHRONOUS MOSFET CONTROLLER  5-25V VCC Range  Operating up to 250kHz  Suitable for Discontinuous Conduction Mode (DCM), Critical Conduction Mode (CrCM), and Continuous Conduction Mode (CCM) Operation  Turn-Off Propagation Delay 15ns and Turn-Off Time 20ns  Proportional Gat
3	ZXGD3108N8	Diodes	40V ACTIVE OR-ING MOSFET CONTROLLER  Active OR’ing MOSFET Controller for High- or Low-Side PSU  Ideal Diode to Reduce Forward Voltage Drop  -3mV Typical Turn-Off Threshold with ±2mV Tolerance  40V Drain Voltage Rating  25V VCC Rating  <5mW Standby Power with Quiescent Supply Curr
4	ZXGD3006E6	Diodes	40V 10A GATE DRIVER  High-Gain Buffer with Typically 4A Output from 1mA Input  40V Supply for +20V to -18V Gate Driving to Prevent dV/dt Induced False Triggering  Emitter-Follower that is Rugged to Latch-Up / Shoot-Through Issues, and Delivers <10ns Propagation Delay
5	ZXGD3110N8	Diodes	SYNCHRONOUS MOSFET CONTROLLER of this IC are the Minimum Off-Time (TOFF) and Minimum On-Time (TON), these features blanket the noise generated during the turn-on and turn-off instances of the power FET. Also Light Load Detection (LLD) for improved efficiency at light and no load,
6	ZXGD3109N8	Diodes	SYNCHRONOUS MOSFET CONTROLLER of this IC are the Minimum Off-Time (TOFF) and Minimum On-Time (TON). These features blanket the noise generated during the turn-on and turn-off instances of the power FET. Also Light Load Detection (LLD) for improved efficiency at light and no load,
7	ZXGD3003E6	Diodes	40V 5A GATE DRIVER  High-Gain Buffer with Typically 1.5A Output from 10mA Input  5 Amps Peak Output Current  40V Supply for +20V to -18V Gate Driving to Prevent dV/dt Induced False Triggering and Minimize On-Losses  Emitter-Follower that is Rugged to Latch-Up/Shoot
8	ZXGD3006E6Q	DIODES	40V 10A GATE DRIVER • High-Gain Buffer with Typically 4A Output from 1mA Input • 40V Supply for +20V to -18V gate driving to prevent dV/dt induced false triggering • Emitter-Follower that is Rugged to Latch-Up / Shoot-Through Issues, and Delivers <10ns Propagation Delay
9	ZXGD3103N8	Diodes Incorporated	SYNCHRONOUS MOSFET CONTROLLER • • • • • Applications • Proportional Gate Drive Turn-off propagation delay 15ns and turn-off time 20ns. Detector threshold voltage ~10mV Standby current 5mA Suitable for Discontinuous Mode (DCM), Critical Conduction Mode (CrCM) and Continuous Mode
10	ZXGD3108	Diodes	40V ACTIVE OR-ING MOSFET CONTROLLER  Active OR’ing MOSFET Controller for High- or Low-Side PSU  Ideal Diode to Reduce Forward Voltage Drop  -3mV Typical Turn-Off Threshold with ±2mV Tolerance  40V Drain Voltage Rating  25V VCC Rating  <5mW Standby Power with Quiescent Supply Curr
11	ZXGD3104N8	Diodes	SYNCHRONOUS MOSFET CONTROLLER
12	ZXGD3005E6	Diodes	25V 10A GATE DRIVER and Benefits  Emitter-Follower Configuration for Ultra-Fast Switching  <10ns Propagation Delay Time  <20ns Rise/Fall Time  Non-Inverting Voltage Buffer Stage  Wide Supply Voltage Up to 25V to Minimize On-Losses  10A Peak Current Drive into Capa
13	ZXGD3107N8TC	Diodes	SYNCHRONOUS MOSFET CONTROLLER  Proportional Gate Drive to Minimize Body Diode Conduction  Low Standby Power with Quiescent Supply Current < 1mA  4.5V Operation Enables Low Voltage Supply  40V VCC Rating  200V Drain Voltage Rating  Operation up to 500kHz  Critical Conductio
14	ZXGD3001E6	Diodes	12V 9A GATE DRIVER • 12V Operating Voltage Range • 9A Peak Output Current • Fast-Switching Emitter-Follower Configuration • 3ns Propagation Delay Time • 11ns Rise/Fall Time, 1000pF Load • Low-Input Current Requirement • 4.2A (source)/2.2A (sink) Output Current from 10m
15	ZXGD3107	Diodes	SYNCHRONOUS MOSFET CONTROLLER  Proportional Gate Drive to Minimize Body Diode Conduction  Low Standby Power with Quiescent Supply Current < 1mA  4.5V Operation Enables Low Voltage Supply  40V VCC Rating  200V Drain Voltage Rating  Operation up to 500kHz  Critical Conductio
16	ZXGD3113W6	Diodes	SYNCHRONOUS MOSFET CONTROLLER  3.5V to 40V VCC Range  Operating up to 250kHz  Suitable for Discontinuous Conduction Mode (DCM), Critical Conduction Mode (CrCM), and Continuous Conduction Mode (CCM) Operation  Proportional Gate Drive Control  Detector Threshold Voltage: -10mV
17	ZXGD3112N7	Diodes	400V ACTIVE OR-ING MOSFET CONTROLLER  Active OR-ing MOSFET Controller for High- or Low-Side PSU  Ideal Diode to Reduce Forward Voltage Drop  -3mV Typical Tur
18	ZXGD3102T8	Diodes	ACTIVE OR-ING CONTROLLER FOR NEW DESIGN USE ZXGD3111N7 ZXGD3102T8 ADVANCED INFORMATION ZXGD3102T8 Document number: DS33461 Rev. 5 - 3 6 of 15 www.diodes.com October 2016 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE ZXGD3111N7 ZXGD3102T8 ADVANCED INFORMATI
19	ZXGD3111N7	Diodes	200V ACTIVE OR-ING MOSFET CONTROLLER
20	ZXGD3009E6	Diodes	40V 1A GATE DRIVER • High-Gain Buffer With Typically 500mA Output from 10mA Input • Rugged Emitter-Follower to Latch-up/Shoot-Through Issues • Wide Supply Voltage to Minimize On-Losses • Optimized Pin-Out to Simplify PCB Layout and Reduce Parasitic Trace Inductances •