| No. | Partie # | Fabricant | Description | Fiche Technique |
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Windforce |
Low capacitance bidirectional TVS Diodes Peak Power Dissipation − 300 W (8 x 20 us Waveform) Replacement for MLV (0805) Protects One Power or I/O Port Low Clamping Voltage Low Leakage Response Time is < 1 ns Available in Multiple Voltages Ranging From 3V to36V Meets MSL 1 R |
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WEJ |
SCHOTTKY DIODES SCHOTTKY DIODES SOD-323 .,LTDMARKING: SD101AWS: S1 SD101BWS: S2 OSD101CWS: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ CParameter Symbol SD101AWS SD101BW Peak Repetitive Peak reverse voltage Working Peak ICDC Bloc |
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Infineon |
TVS Diodes • ESD / transient protection of RF signal lines according to: – IEC61000-4-2 (ESD): ±20 kV (air/contact) – IEC61000-4-4 (EFT): ±40 A (5/50 ns) – IEC61000-4-5 (surge): ±3 A (8/20 μs) • Maximum working voltage: VRWM ±5.3 V • Extremely low capacitance: |
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Windforce |
Low capacitance bidirectional TVS Diodes Peak Power Dissipation − 300 W (8 x 20 us Waveform) Replacement for MLV (0805) Protects One Power or I/O Port Low Clamping Voltage Low Leakage Response Time is < 1 ns Available in Multiple Voltages Ranging From 3V to36V Meets MSL 1 R |
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SeCoS |
Plasetic Encapsulate ESD Protection Diodes TA = 25°C ) RATING SYMBOL VALUE UNIT IEC 61000-4-2 (ESD) Air Contact ±15 KV ±8.0 ESD voltage per human body model 30 KV Total power dissipation on FR-5 Board (Note 1) PD 200 mW Thermal Resistance Junction−to−Ambient RθJA 625 °C / W Ju |
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Infineon |
TVS Diodes • ESD / transient protection of RF signal lines according to: – IEC61000-4-2 (ESD): ±20 kV (air/contact) – IEC61000-4-4 (EFT): ±40 A (5/50 ns) – IEC61000-4-5 (surge): ±3 A (8/20 μs) • Maximum working voltage: VRWM ±5.3 V • Extremely low capacitance: |
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NXP |
Double ESD protection diodes in SOT23 package • Unidirectional ESD protection of up to two lines • Common-cathode configuration • Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs • Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A • Ultra-low reverse leakage current: IRM < 700 nA • ESD protect |
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Diodes |
1 CHANNEL UNIDIRECTIONAL TVS 350 Watts Peak Pulse Power (tp = 8x20μs) IEC 61000-4-2 (ESD): Air – 30kV, Contact – 30kV IEC 61000-4-2 (ESD), HBM – 16kV IEC 61000-4-4, 40A IEC 61000-4-5 (Lightning), 15A Typically Used at Computer Interface Protection, Data Line and Powe |
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Diodes |
SCHOTTKY BARRIER SWITCHING DIODE • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time • Very Low Reverse Capacitance • Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 3) SD101AW - SD101CW SCHOTT |
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JINAN JINGHENG |
SMALL SIGNAL SCHOTTKY DIODES For general purpose applications The SD103 series is a Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring.The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steer |
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International Rectifier |
STANDARD RECOVERY DIODES Hockey Puk Version Wide current range High voltage ratings up to 4500V High surge current capabilities Diffused junction Hockey Puk version Case style DO-200AC (K-PUK) 2100A Typical Applications Converters Power supplies Machine tool controls High power drives Medium |
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SeCoS |
Plastic-Encapsulate Schottky Diodes Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time SOD-123 MARKING Part Number Marking SD101AW S1 SD101BW S2 SD101CW S3 PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Si |
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Diodes |
LIN-BUS BIDIRECTIONAL TVS DIODE and Benefits Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV 1 Channel of ESD Protection Low Channel Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” De |
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Diodes |
LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Low Profile Package (0.53mm Max) and Ultra-Small PCB Footprint Area (1.08mm * 0.68mm Max) Suitable for Compact Portable Electronics Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV 1 Channel of ESD Protection Low C |
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UPM |
SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES * Low Forward Voltage Drop * Guard Ring Construction for Transient Protection * Low Reverse Recovery Time * Low Reverse Capacitance * Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above 1.02(26.0)MIN. |
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Diodes |
SCHOTTKY BARRIER SWITCHING DIODE • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time • Very Low Reverse Capacitance • Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 3) SD101AW - SD101CW SCHOTT |
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DC COMPONENTS |
SMALL SIGNAL SCHOTTKY BARRIER DIODES * For general purpose applications * Low turn-on voltage * Fast switching time * Protected by a PN junction guard ring against excessive voltage, such as electrostatic discharge(ESD) DO-35 MECHANICAL DATA * Case: Glass sealed case * Lead: MIL-STD-2 |
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Diotec |
Si-Schottky-Barrier Diodes |
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JINAN JINGHENG |
SMALL SIGNAL SCHOTTKY DIODES For general purpose applications The SD103 series is a Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring.The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steer |
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PAN JIT |
SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Low Reverse Recovery Time • Low Reverse Capacitance • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass DO-35 • Terminals: Solderable |
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