No. | Partie # | Fabricant | Description | Fiche Technique |
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Diodes |
LOW POWER DUAL OPERATIONAL AMPLIFIER • Internally frequency compensated for unity gain • Large dc voltage gain: 100 dB • Very low supply current drain (500μA); essentially independent of supply voltage • Wide bandwidth (unity gain): 1MHz (temperature compensated) • Input common-mode vol |
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ON Semiconductor |
Micropower Voltage Reference Diodes • Operating Current from 10 mA to 20 mA • 1.0%, 1.5%, 2.0% and 3.0% Initial Tolerance Grades • Low Temperature Coefficient • 1.0 W Dynamic Impedance • Surface Mount Package Available • These Devices are Pb−Free and are RoHS Compliant Cathode 10 k 360 |
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Motorola |
MICROPOWER VOLTAGE REFERENCE DIODES exceptionally low dynamic impedance, low noise and stable operation over time and temperature. Tight voltage tolerances are achieved by on –chip trimming. The large dynamic operating range enables these devices to be used in applications with widely v |
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Diodes |
LOW POWER DUAL OPERATIONAL AMPLIFIER • Internally frequency compensated for unity gain • Large dc voltage gain: 100 dB • Very low supply current drain (500μA); essentially independent of supply voltage • Wide bandwidth (unity gain): 1MHz (temperature compensated) • Input common-mode vol |
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Diodes |
LOW POWER DUAL OPERATIONAL AMPLIFIER • Internally frequency compensated for unity gain • Large dc voltage gain: 100 dB • Very low supply current drain (500μA); essentially independent of supply voltage • Wide bandwidth (unity gain): 1MHz (temperature compensated) • Input common-mode vol |
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Shindengen |
Bridge Diodes ・Small・Compact SIP ・Low VF ・Halogen free ・UL E142422 ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): D6K Equivalent circuit Absolute Maximum Ratings (unless otherwise specified : Tc=25℃) Item Storage temperrature Junction temperature Rep |
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Motorola |
MICROPOWER VOLTAGE REFERENCE DIODES exceptionally low dynamic impedance, low noise and stable operation over time and temperature. Tight voltage tolerances are achieved by on –chip trimming. The large dynamic operating range enables these devices to be used in applications with widely v |
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