| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Diodes Incorporated |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR · · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 Dim A B Min 6.30 2.90 6.71 3.30 2.22 0.92 1.10 1.55 0.025 0.66 4.55 — 10° 0.254 10° Max 6.7 |
|
|
|
|
Diodes Incorporated |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR · · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 Dim A B Min 6.30 2.90 6.71 3.30 2.22 0.92 1.10 1.55 0.025 0.66 4.55 — 10° 0.254 10° Max 6.7 |
|