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Diodes Incorporated |
SURFACE MOUNT SCHOTTKY BARRIER DIODE NEW PRODUCT · · · · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance SOT-523 Dim A C TOP VIEW E G H K M B C Min 0.15 0.75 1.45 ¾ 0.90 1.50 0.00 0.60 0.10 0.10 0. |
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Diodes Incorporated |
SURFACE MOUNT SCHOTTKY BARRIER DIODE NEW PRODUCT · · · · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance SOT-523 Dim A C TOP VIEW E G H K M B C Min 0.15 0.75 1.45 ¾ 0.90 1.50 0.00 0.60 0.10 0.10 0. |
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Diodes Incorporated |
SURFACE MOUNT SCHOTTKY BARRIER DIODE NEW PRODUCT · · · · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance SOT-523 Dim A C TOP VIEW E G H K M B C Min 0.15 0.75 1.45 ¾ 0.90 1.50 0.00 0.60 0.10 0.10 0. |
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Diodes Incorporated |
single P-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AE |
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Diodes Incorporated |
MOSFET • Dual P-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (N |
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Diodes Incorporated |
P-Channel MOSFET and Benefits Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qu |
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Diodes Incorporated |
P-CHANNEL MOSFET and Benefits Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qu |
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Diodes Incorporated |
SURFACE MOUNT SCHOTTKY BARRIER DIODE NEW PRODUCT · · · · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance SOT-523 Dim A C TOP VIEW E G H K M B C Min 0.15 0.75 1.45 ¾ 0.90 1.50 0.00 0.60 0.10 0.10 0. |
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Diodes Incorporated |
P-Channel MOSFET • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Gate "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability A D B |
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Diodes Incorporated |
P-Channel MOSFET • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Gate "Green" Device (Note 4) Qualified to AEC-Q101 standards for High Reliability A D B |
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Diodes Incorporated |
single P-Channel MOSFET • Low On-Resistance • 11mΩ @ VGS = -10V • 17mΩ @ VGS = -4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) Qualified to AEC-Q101 Stan |
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Diodes Incorporated |
P-Channel MOSFET Low Gate Threshold Voltage Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical D |
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Diodes Incorporated |
Dual P-Channel MOSFET • • Dual P-Channel MOSFET Low On-Resistance • 45mΩ @ VGS = -10V • 65mΩ @ VGS = -4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) Qu |
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Diodes Incorporated |
MOSFET • Low On-Resistance • 45mΩ @ VGS = -10V • 65mΩ @ VGS = -4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) Qualified to AEC-Q101 Stan |
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Diodes Incorporated |
MOSFET • Low RDS(ON): • 65mΩ @VGS = -10V • 115mΩ @VGS = -4.5V Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 4) Mechanical Data • • • • • • • • SOT-26 NEW PROD |
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Diodes Incorporated |
MOSFET • Low On-Resistance • 65mΩ @ VGS = -10V • 115mΩ @ VGS = -4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) Qualified to AEC-Q101 Sta |
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Diodes Incorporated |
P-Channel MOSFET and Benefits • • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V max Low Input Capacitance Fast Switching Speed Ultra-Small Surfaced Mount Package Ultra-low package profile, 0.4mm maximum package height ESD Protected G |
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Diodes Incorporated |
30V P-Channel MOSFET and Benefits • • • • • • Low RDS(ON) – ensures on state losses are minimized Small form factor thermally efficient package enables higher density end products Occupies just 33% of the board area occupied by SO-8 enabling smaller end product Totally L |
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Diodes Incorporated |
30V P-Channel MOSFET Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/ |
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Diodes Incorporated |
P-Channel MOSFET and Benefits • • • • • • • • • • Thermally Efficient Package-Cooler Running Applications High Conversion Efficiency Low RDS(on) – Minimizes On State Losses Low Input Capacitance Fast Switching Speed <1.1mm Package Profile – Ideal for Thin Application |
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