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Diodes Incorporated |
N-Channel MOSFET BVDSS 60V RDS(ON) 7.5Ω @ VGS = 5V ID TA = +25°C 115mA Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high |
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Diodes Incorporated |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR · · · · · · · · Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 3) D G B C A NEW PRODUC |
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Diodes Incorporated |
N-channel FET · · · · · Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage G E D G H K J L M SOT-23 A D TOP VIEW B S C Dim A B C D E G H J K L M Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 |
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Diodes Incorporated |
DUAL N-CHANNEL MOSFET and Benefits Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & |
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Diodes Incorporated |
N-channel MOSFET and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Small Surface-Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • |
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Diodes Incorporated |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR · · · · · · · · Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 3) D G B C A NEW PRODUC |
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