Diodes FZT fiche technique

No.	Partie #	Fabricant	Description
1	FZT955	Diodes	140V PNP MEDIUM POWER TRANSISTOR  BVCEO > -140V  IC = -4A High Continuous Collector Current  ICM = -10A Peak Pulse Current  Low Saturation Voltage VCE(sat) < -150mV @ -1A  hFE Specified up to -10A for a High Gain Hold-up  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Haloge
2	FZT851	Diodes	60V NPN MEDIUM POWER TRANSISTOR  BVCEO > 60V  IC = 6A High Continuous Collector Current  ICM = 20A Peak Pulse Current  Low Saturation Voltage VCE(SAT) < 100mV @ 1A  RCE(SAT) = 44mΩ for a Low Equivalent On-Resistance  hFE Specified Up to 10A for a High Gain Hold Up  Complemen
3	FZT589	Diodes	PNP MEDIUM POWER TRANSISTOR  BVCEO > -30V  IC = -1A High Continuous Current  Excellent hFE Characteristics up to -2A  Low Saturation Voltage VCE(sat) < -0.35V @ -1A  Complementary NPN Type: FZT489  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free
4	FZT953	Diodes	100V PNP MEDIUM POWER TRANSISTOR  BVCEO > -100V  IC = -5A High Continuous Collector Current  ICM = -10A Peak Pulse Current  Low Saturation Voltage VCE(SAT) < -115mV @ -1A  RCE(SAT) = 75mΩ for a Low Equivalent On-Resistance  hFE Specified up to -10A for a High Gain Hold-Up  Co
5	FZT853	Diodes	100V NPN MEDIUM POWER TRANSISTOR  BVCEO > 100V  IC = 6A High Continuous Collector Current  ICM = 10A Peak Pulse Current  Low Saturation Voltage VCE(SAT) < 150mV @ 2A  RCE(SAT) = 50mΩ for a Low Equivalent On-Resistance  hFE Specified up to 10A for a High Gain Hold-Up  Compleme
6	FZT857	Diodes	300V NPN MEDIUM POWER TRANSISTOR  BVCEO > 300V  IC = 3.5A High Continuous Collector Current  ICM = 5A Peak Pulse Current  Very Low Saturation Voltage VCE(SAT) < 155mV @ 1A  RCE(SAT) = 87mΩ for a Low Equivalent On-Resistance  hFE Specified Up to 3A for a High Gain Hold-Up  Com
7	FZT951	Diodes	60V PNP MEDIUM POWER TRANSISTOR  BVCEO > -60V  IC = -5A High Continuous Collector Current  ICM = -15A Peak Pulse Current  Low Saturation Voltage VCE(SAT) < -140mV @ -1A  RCE(SAT) = 55mΩ for a Low Equivalent On-Resistance  hFE Specified up to -10A for a High Gain Hold-Up  Com
8	FZT956	Diodes	200V PNP MEDIUM POWER TRANSISTOR  BVCEO > -200V  IC = -2A High Continuous Collector Current  IC = -5A Peak Pulse Current  Low Saturation Voltage VCE(SAT) < -165mV @ -1A  hFE Specified up to -5A for a High Gain Hold-Up  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen a
9	FZT560	Diodes	PNP HIGH VOLTAGE TRANSISTOR  BVCEO > -500V  IC = -150mA High Continuous Current  ICM = -500mA Peak Pulse Current  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPA
10	FZT749	Diodes	PNP HIGH PERFORMANCE TRANSISTOR  BVCEO > -25V  IC = -3A High Continuous Current  ICM = -8A Peak Pulse Current  Low Saturation Voltage VCE(sat) < -300mV @ -1A  Complementary NPN Type: FZT649  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” D
11	FZT751	Diodes	PNP HIGH PERFORMANCE TRANSISTOR  BVCEO > -60V  IC = -3A High Continuous Current  ICM = -6A Peak Pulse Current  Low Saturation Voltage VCE(sat) < -300mV @ -1A  Complementary NPN Type: FZT651  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” D
12	FZT1051A	Diodes	NPN MEDIUM POWER HIGH GAIN TRANSISTOR  BVCEO > 40V  IC = 5A High Continuous Collector Current  ICM = 20A Peak Pulse Current  Low Saturation Voltage VCE(sat) < 120mV @ 1A  RSAT = 50mΩ @ 5A for a Low Equivalent On-Resistance  hFE Specified up to 10A for a High Gain Hold-Up  Compleme
13	FZT1053A	Diodes	75V NPN MEDIUM POWER HIGH GAIN TRANSISTOR  BVCEO > 75V  IC= 4.5A High Continuous Collector Current  ICM = 10A Peak Pulse Current  Low Saturation Voltage VCE(sat) < 120mV @ 1A  hFE > 300 @ IC=1A for a High Gain Hold-Up  RCE(sat) = 78mΩ at 4.5A for a Low Equivalent On-Resistance  Lead-F
14	FZT758	Diodes	400V PNP HIGH VOLTAGE TRANSISTOR • BVCEO > -400V • IC = -500mA High Continuous Current • ICM = 1A Peak Pulse Current • Low Saturation Voltage VCE(SAT) < 250mV @ 50mA • hFE > 40 Specified up to 200mA for High Current Gain Hold Up • Complementary NPN Type: FZT658 • Lead-Free Finish; R
15	FZT1049A	Diodes	25V NPN MEDIUM POWER TRANSISTOR  BVCEO > 25V  IC = 5A high Continuous Collector Current  ICM = 20A Peak Pulse Current  Low Saturation Voltage VCE(sat) < 70mV @ 1A  RCE(sat) = 50mΩ for a low equivalent On-Resistance  hFE specified up to 20A for a high gain hold up  Lead-Free
16	FZT649	Diodes	25V NPN HIGH PERFORMANCE TRANSISTOR • BVCEO > 25V • IC = 3A High Continuous Current • ICM = 8A Peak Pulse Current • Low Saturation Voltage VCE(sat) < 300mV @ 1A • Complementary PNP Type: FZT749 • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device
17	FZT869	Diodes	25V NPN HIGH CURRENT TRANSISTOR  BVCEO > 25V  IC = 7A High Continuous Collector Current  ICM = 20A Peak Pulse Current  Very Low Saturation Voltage VCE(SAT) < 110mV @ 1A  RCE(SAT) = 36mΩ at 5A for a Low Equivalent On-Resistance  hFE Specified Up to 20A for a High Gain Hold Up
18	FZT558	Diodes	PNP HIGH VOLTAGE TRANSISTOR  BVCEO > -400V  IC = -200mA High Continuous Current  Excellent hFE Characteristics up to -100mA  Low Saturation Voltage VCE(sat) < -200mV @ -20mA  Complementary NPN Type: FZT458  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Anti
19	FZT591A	Diodes	PNP MEDIUM POWER TRANSISTOR  BVCEO > -40V  IC = -1A High Continuous Current  Low Saturation Voltage VCE(sat) < -500mV @ -1A  Complementary PNP Type: FZT591A  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to
20	FZT593	Diodes	PNP MEDIUM POWER TRANSISTOR  BVCEO > -100V  IC = -1A High Continuous Current  ICM = -2A Peak Pulse Current  Low Saturation Voltage  Complementary NPN Type: FZT493  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualif