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DIODES |
80V N-CHANNEL MOSFET Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application High Conversion Efficiency Low RDS(ON) – Minimizes On State Losse |
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DIODES |
40V N-CHANNEL MOSFET and Benefits Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application Thermally Efficient Package-Cooler Running Application |
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Diodes |
N-Channel MOSFET High Conversion Efficiency Low RDS(ON) – Minimizes On State Losses Low Input Capacitance Fast Switching Speed <1.1mm Package Profile – Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. |
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Diodes |
N-CHANNEL MOSFET 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application Low Input Capacitance Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualifi |
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DIODES |
80V N-CHANNEL MOSFET Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application High Conversion Efficiency Low RDS(ON) – Minimizes On State Losse |
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DIODES |
N-CHANNEL MOSFET 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application High Conversion Efficiency Low RDS(ON) – Minimizes On-State Losses Low Input Capacitance Fast Switching Speed Lead-Free Finish; |
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Diodes |
N-Channel MOSFET BVDSS 40V RDS(ON) Max 3.7mΩ @ VGS = 10V ID TC = +25°C (Note 7) 100A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal |
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Diodes |
60V N-Channel MOSFET Rated to +175C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – ensures more reliable and robust end application Low RDS(ON) – minimizes power losses Low Qg – minimizes switching losses Lead-Free Finis |
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Diodes |
N-Channel MOSFET and Benefits Low Gate Threshold Voltage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description Mechanical Data This new generation MOSFET is designed to minimize the on-state C |
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DIODES |
30V N-CHANNEL MOSFET and Benefits BVDSS 30V RDS(ON) Max 3.2mΩ @ VGS = 10V 5.5mΩ @ VGS = 4.5V ID Max TC = +25°C 100A 85A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, su |
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DIODES |
80V N-CHANNEL MOSFET |
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DIODES |
40V N-CHANNEL MOSFET and Benefits BVDSS 40V RDS(ON) Max 8.9mΩ @ VGS = 10V ID Max TC = +25°C 52.4A Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it |
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DIODES |
60V N-CHANNEL MOSFET Rated to +175°C—Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching (UIS) Test in Production— Ensures More Reliable and Robust End Application Low RDS(ON)—Minimizes On-State Losses Low Input Capacitance Fast S |
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DIODES |
N-CHANNEL ENHANCEMENT MODE MOSFET low on-resistance and fast switching, making it ideal for high-efficiency power-management applications. Engine management systems Body control electronics DC-DC converters Features and Benefits Rated to +175°C – Ideal for High Ambient Tempe |
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Diodes |
60V N-CHANNEL MOSFET • Rated to +175°C—Ideal for High Ambient Temperature Environments • 100% Unclamped Inductive Switching (UIS) Test in Production— Ensures More Reliable and Robust End Application • Low RDS(ON)—Minimizes Power Losses • Low QG—Minimizes Switching Losses |
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Diodes |
N-CHANNEL MOSFET 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application Thermally Efficient Package-Cooler Running Applications High Conversion Efficiency Low RDS(ON) – Minimizes On State Losses <1.1mm Package Profile – Ideal |
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Diodes |
N-Channel MOSFET and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production High Conversion Efficiency Low RDS(ON) – Ensures On-State Losses Are Minimized Excellent QGD x RDS(ON) Product (FOM) Advanced Technology for DC-DC Converters Totally Le |
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Diodes |
60V N-Channel MOSFET • Rated to +175°C – Ideal for High Ambient Temperature Environments • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application • Low RDS(ON) – Minimizes On-State Losses • Low Input Capacitance • |
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Diodes |
N-Channel MOSFET and Benefits Low RDS(ON) – Minimizes On-State Losses Excellent Qgd x RDS(ON) Product (FOM) Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher Density End Products 100% Unclamped Inductive S |
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Diodes |
N-Channel MOSFET Low On-Resistance Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case:TO252 Case Material: Mol |
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